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ACST8-8CT

STMicroelectronics

ACST8-8CT by STMicroelectronics

ACST8-8CT by STMicroelectronics is a snubberless TRIAC designed for efficient AC control. It features a max RMS on-state current of 8 A, operates from -40 °C to 125 °C, and supports up to 800 V off-state voltage. Ideal for motor control and lighting applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,345 parts In-Stock

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Vyrian

USA . 3,881 parts In-Stock

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ECAB

Sweden . 1,326 parts In-Stock

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Anansix

USA . 1,222 parts In-Stock

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Huijzer Components

Netherlands . 32 parts In-Stock

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Microfarads

USA . 4 parts In-Stock

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Bristol Electronics

USA . 4 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 971 parts In-Stock

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$0.119

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$0.114

971

$0.119

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$0.114

Northwest PG Solutions

USA . 896 parts In-Stock

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$0.131

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$0.115

896

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$0.115

IDEA Electronic Components Group

UK . 1,234 parts In-Stock

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$4.305

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$3.874

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$4.305

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MKK Technologies

India . 498 parts In-Stock

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$8.095

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DigiPath Technology Company

USA . 498 parts In-Stock

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$8.095

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AZTECH Wire

Italy . 939 parts In-Stock

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$10.150

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Parana Technologies

USA . 1,326 parts In-Stock

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$5.147

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Corphita

USA . 322 parts In-Stock

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Perfect Parts

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Overview

Elevate your designs with the ACST8-8CT from STMicroelectronics, a premier choice in snubberless TRIAC technology. Renowned for its quality and reliability, STMicroelectronics ensures optimal performance across various applications, from home appliances to industrial controls. With low leakage current and robust temperature range, this TRIAC not only enhances efficiency but also guarantees longevity, making it an invaluable asset for engineers and developers seeking superior solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against environmental factors, making the TRIAC suitable for various applications.

Maximum DC Gate Trigger Current: 30 mA

With a manageable gate trigger current, this TRIAC allows easy interfacing with control circuits, enhancing design flexibility.

Configuration: SINGLE

The single configuration simplifies the design and integration into circuits, making the TRIAC efficient for straightforward applications.

Package Shape: RECTANGULAR

The rectangular shape facilitates compact layouts, enabling efficient use of space in electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support, ensuring reliable connections in high-stress environments.

Maximum Leakage Current: 1 mA

A low maximum leakage current minimizes power loss and enhances overall energy efficiency in applications.

No. of Terminals: 3

The three-terminal design allows for versatile circuit configurations, accommodating various control and power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount design ensures secure placement in applications, allowing for stable operation in diverse mounting situations.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this TRIAC can withstand harsh environments, making it suitable for industrial applications.

Trigger Device Type: SNUBBERLESS TRIAC

The snubberless feature reduces complexity in circuits by eliminating the need for external snubber components, resulting in a more compact design.

Minimum Operating Temperature: -40 °C

The wide operating temperature range ensures reliable performance in extreme conditions, increasing the TRIAC's applicability.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent corrosion resistance, enhancing the longevity and reliability of electrical connections.

Terminal Position: SINGLE

Having a single terminal position simplifies the design process and minimizes the potential for incorrect connections.

Maximum RMS On-state Current: 8 A

The 8 A rating allows this TRIAC to handle substantial loads, making it suitable for a wide range of power control applications.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage ensures compatibility with low-voltage control circuits, making it easier to incorporate into various designs.

Case Connection: MAIN TERMINAL 2

The case connection design makes it easy to integrate into standard electronic circuits, enhancing usability.

Repetitive Peak Off-state Voltage: 800 V

With a high off-state voltage rating, this TRIAC can effectively manage substantial voltage levels, improving safety and reliability in circuits.

Minimum Critical Rate of Rise of Off-state Voltage: 750 V/us

A high critical rate of rise helps prevent voltage breakdown issues, ensuring the TRIAC operates reliably under fast-switching conditions.

Maximum Holding Current: 40 mA

A maximum holding current of 40 mA allows for efficient control of current flow, important for power management applications.

Technical Specifications

Triode For Alternating Current (TRIAC) ACST8-8CT attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

750 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

1 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

ACST8-8CT Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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