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SKM400GB12V

Semikron International

SKM400GB12V by Semikron International

Semikron International's SKM400GB12V is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.2V and Max Collector-Emitter Voltage of 1200V, it operates at up to 175°C. With UL RECOGNIZED standard, this RECTANGULAR package has 11 terminals and FLANGE MOUNT style for high-power needs.

Median Price

$446.280

Lifecycle Status

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5

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< 1k

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Farnell

UK . 24 parts In-Stock

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$328.750

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Element14

Singapore . 24 parts In-Stock

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$563.810

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Nova Conductors

Japan . 100 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 83 parts In-Stock

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Cyclops Electronics Ltd

UK . 3 parts In-Stock

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Continental Prestige Electronics

USA . 4 parts In-Stock

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$271.080

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Netroflash

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USA . 100 parts In-Stock

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Overview

Upgrade your power control capabilities with the SKM400GB12V by Semikron International. Designed with precision and quality in mind, this insulated gate bipolar transistor (IGBT) offers unparalleled performance and reliability for a variety of applications. Whether you're looking to enhance industrial machinery or optimize renewable energy systems, this N-channel transistor with built-in diode is the perfect solution. Experience the benefits of its low VCEsat, high collector current, and maximum operating temperature of 175°C. Trust Semikron International to deliver cutting-edge technology that surpasses expectations.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop and higher efficiency compared to P-channel IGBTs, making them a good choice for power control applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for higher voltage and current handling capabilities, making the IGBT suitable for power control applications requiring high power levels.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and efficiency in controlling large amounts of power.

Maximum VCEsat: 2.2 V

The low VCEsat voltage drop indicates minimal power loss when the IGBT is conducting, contributing to higher efficiency in power control applications.

Package Shape: RECTANGULAR

Rectangular package shapes are typically easier to mount and provide good thermal conduction, enhancing reliability and ease of use in various applications.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum VCE voltage rating allows the IGBT to withstand high voltage levels, making it suitable for high power applications that require handling large voltage levels.

Maximum Collector Current (IC): 598 A

With a high maximum collector current rating, this IGBT can handle large amounts of current, making it suitable for high power applications that require handling large current levels.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKM400GB12V attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X11

No. of Elements:

2

No. of Terminals:

11

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2.2 V

Trade Compliance

SKM400GB12V Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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