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SKM400GB176DL3

Semikron International

SKM400GB176DL3 by Semikron International

Semikron International's SKM400GB176DL3 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.45V and can handle up to 450A of Max Collector Current. Ideal for POWER CONTROL applications due to its high voltage capacity (1700V) and fast switching times (ton: 1092ns, toff: 1400ns).

Median Price

$580.200

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$580.200

100+ parts

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1k+ parts

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100

$580.200

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Vyrian

USA . 880 parts In-Stock

1+ parts

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10k+ parts

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880

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.478

100+ parts

$1.463

1k+ parts

$1.404

10k+ parts

-

3,000

$1.478

$1.463

$1.404

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AZTECH Wire

Italy . 817 parts In-Stock

1+ parts

$15.111

100+ parts

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1k+ parts

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10k+ parts

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817

$15.111

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$580.200

100+ parts

$568.596

1k+ parts

-

10k+ parts

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1,000

$580.200

$568.596

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Overview

Unleash the power of innovation with the SKM400GB176DL3 by Semikron International, a leading manufacturer of Insulated Gate Bipolar Transistors (IGBT). This N-CHANNEL transistor offers unparalleled performance and reliability in power control applications. With its series connected configuration and built-in diode, this transistor provides maximum efficiency and seamless operation. Elevate your projects to new heights with the SKM400GB176DL3's high-quality design and advanced features, making it the ultimate choice for demanding industrial applications. Experience the difference with Semikron International and unlock a world of possibilities with this game-changing transistor.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL polarity allows for efficient power control and better performance in high power applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration offers high voltage handling capability and improved reliability for power control applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in controlling high power loads.

Maximum VCEsat: 2.45 V

Low maximum VCEsat value indicates high efficiency and low power dissipation in operation.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and efficient use of space in electronic circuits.

No. of Elements: 2

Having 2 elements provides redundancy and improved performance in power control applications.

Nominal Turn Off Time (toff): 1400 ns

Fast turn off time ensures quick response and precise control in power switching applications.

No. of Terminals: 7

Having 7 terminals allows for easy connections and integration into electronic circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting and heat dissipation for reliable operation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures stability and reliability in harsh environments.

Maximum Collector-Emitter Voltage: 1700 V

High maximum Collector-Emitter voltage rating allows for handling of high voltage loads.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in power electronics applications.

Maximum Gate-Emitter Voltage: 20 V

High maximum Gate-Emitter voltage rating ensures safe operation and protection of the transistor.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature range allows for operation in extreme cold conditions.

Maximum Collector Current (IC): 450 A

High maximum Collector current rating allows for handling of large power loads.

Maximum Gate-Emitter Threshold Voltage: 6.4 V

High maximum Gate-Emitter threshold voltage ensures stable operation and protection against voltage spikes.

Terminal Position: UPPER

Upper terminal position allows for easy connectivity and integration into electronic circuits.

Case Connection: ISOLATED

Isolated case connection provides improved safety and protection against electrical hazards.

Nominal Turn On Time (ton): 1092 ns

Fast turn on time ensures quick response and precise control in power switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKM400GB176DL3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1400 ns

Nominal Turn On Time (ton):

1092 ns

Maximum VCEsat:

2.45 V

Trade Compliance

SKM400GB176DL3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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