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JANTX2N4957

Semicoa

JANTX2N4957 by Semicoa

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;

Median Price

$73.991

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

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Arrow

USA . 50 parts In-Stock

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$73.991

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$70.587

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Verical

USA . 50 parts In-Stock

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$73.991

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Chip1Stop

Japan . 50 parts In-Stock

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DF Sales Co.

USA . 13 parts In-Stock

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$10.000

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DF Sales Co.

USA . 13 parts In-Stock

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Freelance Electronics

USA . 839 parts In-Stock

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$41.380

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$43.449

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$40.966

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839

$41.380

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American Microsemiconductor Inc.

USA . 17 parts In-Stock

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$49.940

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TEDSS.com

USA . 50 parts In-Stock

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Vyrian

USA . 8,713 parts In-Stock

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Electronics Depot

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Resion

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Speed Components Ltd

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Sensible Micro Corp

USA . 7 parts In-Stock

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$73.232

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$67.599

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Component Sense

UK . 1 parts In-Stock

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Bristol Electronics

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Distributors (Availability)

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Andel Nordic

Denmark . 1,200 parts In-Stock

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$7.371

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$7.076

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$7.076

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$7.371

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$7.076

$7.076

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) JANTX2N4957 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Semicoa

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.8 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Qualified

Reference Standard:

MIL-19500/426

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

JANTX2N4957 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-028-1077, 5961010281077

NIIN

010281077

Manufacturer Highlights

Semicoa

Trusted Everywhere for Mission Success is our commitment statement to our customers. This means the Semicoa Team operates as one to ensure the product exceeds expectation. SEMICOA is a leader in the design and development of bipolar power devices for high-reliability military, defense, aerospace, and space applications. Quality and high reliability are cornerstones upon which space, military, and aerospace applications are built. In many instances, there is absolutely no room for error. These critical industries require a partner that they can trust to deliver time after time. For 50 years, SEMICOA has been Trusted Everywhere. Semicoa specializes in the manufacture of discrete silicon semiconductors focusing on small signal transistors for space, military, and aerospace industries globally. The design, development and wafer fabrication operations are located in Southern California. The company achieved the highest U.S. government qualification (JANS, MIL-PRF-19500, Space Level) for the production of electronic components and it is AS9100:2009D certified. Semicoa is ITAR registered. Semicoa is also an active member of the JEDEC Community. Its leading edge manufacturing facility performs discrete and hybrid assembly utilizing innovative techniques and processes. High volume production is performed on dedicated assembly lines to reduce cost and increase throughput. Semicoa constantly expands product, equipment and production capabilities to meet the growing demand of its customers for high reliability and Rad Hard products.

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