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2N2951

Semicoa

2N2951 by Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .25 A;

Median Price

$15.800

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

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American Microsemiconductor Inc.

USA . 4 parts In-Stock

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$15.800

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Vyrian

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Digiode

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ACDS - Activité Composants Distribution Service

France . 159 parts In-Stock

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DF Sales Co.

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DF Sales Co.

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Electronic Expediters

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PUI

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Prism Electronics

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Resion

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ICP Electronique

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ECAB

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Native Components

USA . 235 parts In-Stock

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$1.123

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Northwest PG Solutions

USA . 2,136 parts In-Stock

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$1.235

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Parana Technologies

USA . 201 parts In-Stock

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$1.771

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$2.338

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DigiPath Technology Company

USA . 2,097 parts In-Stock

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$1.950

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$1.794

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ChromeModa Solutions

Germany . 3,169 parts In-Stock

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IDEA Electronic Components Group

UK . 1,282 parts In-Stock

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AZTECH Wire

Italy . 594 parts In-Stock

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One Stop Electronics

USA . 640 parts In-Stock

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$23.050

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Marpe Global Electronics

Taiwan . 4,653 parts In-Stock

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XL Components Corporation

Australia . 3,247 parts In-Stock

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Corphita

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QualityLine Systems

Poland . 1,965 parts In-Stock

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Assy Fe

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N2951 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Semicoa

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N2951 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-724-7552, 5961007247552

NIIN

007247552

Manufacturer Highlights

Semicoa

Trusted Everywhere for Mission Success is our commitment statement to our customers. This means the Semicoa Team operates as one to ensure the product exceeds expectation. SEMICOA is a leader in the design and development of bipolar power devices for high-reliability military, defense, aerospace, and space applications. Quality and high reliability are cornerstones upon which space, military, and aerospace applications are built. In many instances, there is absolutely no room for error. These critical industries require a partner that they can trust to deliver time after time. For 50 years, SEMICOA has been Trusted Everywhere. Semicoa specializes in the manufacture of discrete silicon semiconductors focusing on small signal transistors for space, military, and aerospace industries globally. The design, development and wafer fabrication operations are located in Southern California. The company achieved the highest U.S. government qualification (JANS, MIL-PRF-19500, Space Level) for the production of electronic components and it is AS9100:2009D certified. Semicoa is ITAR registered. Semicoa is also an active member of the JEDEC Community. Its leading edge manufacturing facility performs discrete and hybrid assembly utilizing innovative techniques and processes. High volume production is performed on dedicated assembly lines to reduce cost and increase throughput. Semicoa constantly expands product, equipment and production capabilities to meet the growing demand of its customers for high reliability and Rad Hard products.

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