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RSR030N06HZGTL

ROHM

RSR030N06HZGTL by ROHM

ROHM's RSR030N06HZGTL is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is designed for switching applications and operates in enhancement mode. With a max drain current of 3A and a low on-resistance of 0.105 ohm, it offers efficient performance in a compact package.

Median Price

$0.783

Lifecycle Status

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16

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1k+

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Element14

Singapore . 3,707 parts In-Stock

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$0.783

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$0.473

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$0.312

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$0.783

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Mouser Electronics

USA . 5,776 parts In-Stock

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$1.230

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$0.507

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$0.356

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$0.282

5,776

$1.230

$0.507

$0.356

$0.282

DigiKey

USA . 4,864 parts In-Stock

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$1.230

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$0.506

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$0.356

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$1.230

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Newark

USA . 1,323 parts In-Stock

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$1.270

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$0.521

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$0.366

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1,323

$1.270

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Future Electronics

Canada . 6,000 parts In-Stock

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$0.142

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Farnell

UK . 3,707 parts In-Stock

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$0.459

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$0.296

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$0.271

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$0.459

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RS (Exports)

UK . 2,780 parts In-Stock

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Verical

USA . 2,000 parts In-Stock

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$1.156

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Chip1Stop

Japan . 1,215 parts In-Stock

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$0.448

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$0.315

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$0.251

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Distributors (In-Stock)

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TME

Poland . 2,200 parts In-Stock

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$1.150

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$0.469

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$0.332

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$0.258

2,200

$1.150

$0.469

$0.332

$0.258

Chip Stock

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NAC Semi

USA . 6,000 parts In-Stock

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IBS Electronics

USA . 6,000 parts In-Stock

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Vyrian

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ACDS - Activité Composants Distribution Service

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Nova Conductors

Japan . 870 parts In-Stock

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Ampacity Inc.

Singapore . 3,793 parts In-Stock

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$0.209

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CoreStaff

Japan . 3,000 parts In-Stock

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$0.484

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$0.238

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$0.191

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$0.484

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Continental Prestige Electronics

USA . 3,722 parts In-Stock

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$0.565

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$0.386

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$0.244

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$0.194

3,722

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$0.386

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$0.194

Aztec Data Supply Inc.

USA . 589 parts In-Stock

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$1.798

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Corohmni

South Africa . 306 parts In-Stock

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$1.927

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Infinite Electronics LLP (Excess)

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GreenTree Electronics

Israel . 18,000 parts In-Stock

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Formix International (Excess)

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Authorized Procurement Solutions

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Argo Parts USA

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Allen Electronics Distributors

USA . 3,000 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Discover the RSR030N06HZGTL by ROHM, a high-quality Small Signal Field Effect Transistor (FET) designed for switching applications. With its N-CHANNEL polarity and single configuration with built-in diode, this transistor offers exceptional performance and reliability. Its compact rectangular package shape and gull wing terminal form make it easy to integrate into any design. Benefit from its enhancement mode operating mode and wide temperature range of -55 to 150°C. The RSR030N06HZGTL ensures efficient power dissipation with a maximum drain current of 3A and a low drain-source on resistance of only 0.105 ohm. Trust in ROHM's expertise and choose this industry-leading FET for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, ideal for small signal applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors are known for their high input impedance and low output impedance, making them suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps in protecting the transistor from reverse voltage and enhances its performance in switching circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in controlling electrical signals.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages, making it versatile for different applications.

Surface Mount: YES

Surface mount design allows for easy installation on PCBs, saving space and simplifying the manufacturing process.

Maximum Power Dissipation (Abs): 1 W

With a high power dissipation rating, this transistor can handle power spikes and operate reliably in various conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers high efficiency and low power consumption, making this transistor energy-efficient.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without degradation, ensuring reliability in harsh environments.

Maximum Drain Current (ID): 3 A

Capable of handling high current loads, suitable for applications requiring a larger current flow.

Technical Specifications

Small Signal Field Effect Transistors (FET) RSR030N06HZGTL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.105 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

45 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSR030N06HZGTL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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