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RSR020N06HZGTL

ROHM

RSR020N06HZGTL by ROHM

ROHM RSR020N06HZGTL is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2A and 0.21 ohm On Resistance. With GULL WING terminals and AEC-Q101 standard, it operates b/w -55 to 150 °C.

Median Price

$0.488

Lifecycle Status

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Mouser Electronics

USA . 822 parts In-Stock

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$1.020

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$0.414

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$0.288

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$0.217

822

$1.020

$0.414

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$0.217

Newark

USA . 2,064 parts In-Stock

1+ parts

$1.050

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$0.425

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$0.328

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DigiKey

USA . 9,000 parts In-Stock

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$0.219

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Verical

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RS (Exports)

UK . 3,000 parts In-Stock

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$0.385

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Farnell

UK . 2,564 parts In-Stock

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$0.309

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$0.224

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Element14

Singapore . 391 parts In-Stock

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$0.488

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$0.341

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Chip1Stop

Japan . 6 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 72,177 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 2,103 parts In-Stock

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CoreStaff

Japan . 2,992 parts In-Stock

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$10.156

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$6.710

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$6.684

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Argo Parts USA

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Aranea Global

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Continental Prestige Electronics

USA . 1,617 parts In-Stock

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$0.279

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$0.183

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$0.158

1,617

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$0.158

Overview

Get ready to experience superior performance and reliability with the RSR020N06HZGTL by ROHM. As a leading manufacturer in the industry, ROHM delivers top-quality small signal field effect transistors that are perfect for switching applications. With a minimum DS breakdown voltage of 60V and maximum drain current of 2A, this N-channel transistor provides enhanced efficiency and functionality. Its built-in diode and metal-oxide semiconductor technology ensure optimal performance while its small outline package shape makes it easy to integrate into your designs. Trust ROHM to deliver exceptional products that meet AEC-Q101 standards, providing you with the value and benefits you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers good conductivity and efficiency for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a diode, saving space and reducing the need for additional components.

Transistor Application: SWITCHING

Optimized for fast switching speeds, making it suitable for applications that require rapid on/off transitions.

Surface Mount: YES

Allows for easy and convenient integration onto circuit boards without the need for additional mounting hardware.

Minimum DS Breakdown Voltage: 60 V

Provides a high breakdown voltage, ensuring reliable performance in various operating conditions.

Package Shape: RECTANGULAR

Allows for efficient placement on circuit boards and easy integration into compact electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering onto circuit boards, ensuring a secure electrical connection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer low leakage current and high gate control, enhancing overall efficiency.

No. of Terminals: 3

Simplifies circuit connections and reduces the risk of error during installation.

Maximum Power Dissipation (Abs): 1 W

Can handle moderate power levels, making it suitable for a wide range of applications without overheating.

Package Style (Meter): SMALL OUTLINE

Compact form factor allows for space-saving integration into electronic devices with limited space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides reliable performance and efficiency, especially in high-frequency applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without experiencing performance degradation, ensuring reliability in demanding environments.

Transistor Element Material: SILICON

Silicon offers good electrical properties and stability, making it a common choice for transistor construction.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments without losing functionality, making it versatile for different applications.

Maximum Drain Current (ID): 2 A

Capable of handling high levels of current, suitable for applications that require a robust power handling capability.

Maximum Drain-Source On Resistance: 0.21 ohm

Low on-resistance allows for efficient power transfer and minimal heat generation, improving overall performance.

Terminal Position: DUAL

Facilitates easy connection to external components, ensuring a secure and stable electrical connection.

Maximum Feedback Capacitance (Crss): 22 pF

Low feedback capacitance minimizes signal distortion and improves high-frequency response in switching applications.

Reference Standard: AEC-Q101

Complies with automotive-grade requirements, ensuring high reliability and performance in automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) RSR020N06HZGTL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.21 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

22 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSR020N06HZGTL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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