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RSR010N10FHATL

ROHM

RSR010N10FHATL by ROHM

ROHM's RSR010N10FHATL is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. Featuring 0.58 ohm max on-resistance and 1A max drain current, it operates in enhancement mode. With gull wing terminals and AEC-Q101 standard compliance, it suits surface mount designs in automotive electronics.

Median Price

$0.718

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 100 parts In-Stock

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$0.259

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100

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$0.259

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Farnell

UK . 56 parts In-Stock

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$0.718

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56

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$0.718

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Element14

Singapore . 56 parts In-Stock

1+ parts

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$0.860

1k+ parts

$0.706

10k+ parts

$0.591

56

-

$0.860

$0.706

$0.591

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

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J2 Sourcing AB

Sweden . 58 parts In-Stock

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58

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,008 parts In-Stock

1+ parts

$0.220

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3,008

$0.220

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Continental Prestige Electronics

USA . 5,606 parts In-Stock

1+ parts

$0.836

100+ parts

$0.494

1k+ parts

$0.312

10k+ parts

$0.285

5,606

$0.836

$0.494

$0.312

$0.285

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Aranea Global

USA . 500 parts In-Stock

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Argo Parts USA

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Overview

Discover the RSR010N10FHATL by ROHM, a top-quality Small Signal Field Effect Transistor that offers unmatched performance and reliability. Manufactured by industry leader ROHM, this N-CHANNEL transistor is ideal for switching applications, with a built-in diode for added convenience. With a minimum DS breakdown voltage of 100V and maximum drain current of 1A, this transistor provides exceptional value and efficiency. Upgrade your electronics with the RSR010N10FHATL and experience superior functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good protection and insulation for the transistor, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-Channel type allows for efficient current flow and switching capabilities, making it suitable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and protects the transistor from voltage spikes, enhancing its functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast operation and high efficiency.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 100 V

High breakdown voltage ensures reliable performance and protection against voltage surges.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides low power consumption and high efficiency in operation.

Maximum Drain Current (ID): 1 A

High maximum drain current capability allows for handling of larger currents, suitable for various applications.

Maximum Drain-Source On Resistance: 0.58 ohm

Low drain-source on resistance minimizes power loss and heat generation, improving overall efficiency.

Peak Reflow Temperature °C: 260

Capable of withstanding high peak reflow temperatures, ensuring durability during soldering processes.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality, suitable for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) RSR010N10FHATL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.58 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSR010N10FHATL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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