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RSR030N06FRATL

ROHM

RSR030N06FRATL by ROHM

ROHM's RSR030N06FRATL is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and GULL WING terminals. Operating in enhancement mode, it has a max drain current of 3A and 0.105 ohm on-resistance.

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Overview

Discover the unmatched quality and reliability of the RSR030N06FRATL by ROHM, a leading manufacturer in the industry. This N-CHANNEL Small Signal Field Effect Transistor (FET) with a built-in diode is perfect for various switching applications. With a minimum breakdown voltage of 60V and maximum drain current of 3A, this transistor offers exceptional performance and efficiency. Designed for enhancement mode operation, this transistor ensures optimal functionality in a compact package. Trust ROHM to deliver cutting-edge technology and superior products that meet your unique needs. Elevate your projects with the RSR030N06FRATL and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and resistance to external elements, making the transistor suitable for a variety of environments.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors are commonly used for switching applications, offering fast switching speeds and low on-state resistance.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and protects against reverse voltage, enhancing the efficiency and reliability of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high speed and efficiency in controlling the flow of current.

Surface Mount: YES

Surface mount technology allows for easy installation on PCBs, saving space and enabling automated assembly processes.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can withstand higher voltage levels, making it suitable for use in various high-power circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact form factor, allowing for efficient placement on the PCB.

Terminal Form: GULL WING

The gull wing terminal form offers easy soldering onto the PCB, ensuring reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low leakage current, improving overall circuit performance.

No. of Terminals: 3

Having 3 terminals allows for easy connection in the circuit, enabling versatile usage in different electronic applications.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1W, this transistor can handle moderate power levels, ensuring reliable operation under normal conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability and low noise operation, enhancing the overall performance of the transistor.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for harsh environmental conditions.

Transistor Element Material: SILICON

Silicon material provides high efficiency and reliability, ensuring stable performance over a wide range of operating conditions.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this transistor can operate in cold environments without compromising performance.

Maximum Drain Current (ID): 3 A

Capable of handling a maximum drain current of 3A, this transistor is suitable for high-power applications that require efficient current control.

Maximum Drain-Source On Resistance: 0.105 ohm

With a low drain-source on resistance, this transistor offers efficient current flow and minimal power loss during operation.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options and easy integration in the circuit layout.

Maximum Feedback Capacitance (Crss): 45 pF

Low feedback capacitance reduces the risk of oscillations and improves stability in the circuit, enhancing overall performance.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability, making this transistor suitable for automotive applications and other demanding environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) RSR030N06FRATL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.105 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

45 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSR030N06FRATL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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