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RGS80TSX2DGC11

ROHM

RGS80TSX2DGC11 by ROHM

ROHM's RGS80TSX2DGC11 is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 555W power dissipation. Ideal for POWER CONTROL applications, it features a built-in diode and operates b/w -40 to 175°C.

Median Price

$12.710

Lifecycle Status

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8

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1k+

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Farnell

UK . 104 parts In-Stock

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$9.930

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$5.510

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$9.930

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Chip1Stop

Japan . 315 parts In-Stock

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$12.300

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$6.600

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$5.570

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$5.440

315

$12.300

$6.600

$5.570

$5.440

Mouser Electronics

USA . 839 parts In-Stock

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$13.120

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$7.500

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839

$13.120

$7.500

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DigiKey

USA . 183 parts In-Stock

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$13.120

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$7.942

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$6.809

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183

$13.120

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Element14

Singapore . 104 parts In-Stock

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$18.970

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$10.340

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Verical

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RS (Exports)

UK . 448 parts In-Stock

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$8.673

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Nova Conductors

Japan . 100 parts In-Stock

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Ampacity Inc.

Singapore . 336 parts In-Stock

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$6.310

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$6.310

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CoreStaff

Japan . 450 parts In-Stock

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$10.354

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$4.644

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$10.354

$4.644

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Continental Prestige Electronics

USA . 337 parts In-Stock

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$10.680

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$7.880

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337

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Microchip USA

USA . 6,881 parts In-Stock

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$32.704

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Infinite Electronics LLP (Excess)

. 10,767 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Formix International (Excess)

India . 4,900 parts In-Stock

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Argo Parts USA

USA . 4,770 parts In-Stock

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Aranea Global

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Overview

Experience the power and precision of the RGS80TSX2DGC11 by ROHM, a top-tier manufacturer known for its high-quality components. This Insulated Gate Bipolar Transistor (IGBT) offers superior performance in power control applications, with a maximum collector-emitter voltage of 1200V and a maximum collector current of 80A. Its single configuration with built-in diode simplifies installation, while the flange mount package style ensures secure mounting. Trust ROHM for reliability and efficiency in your power control projects, and unlock the full potential of your applications with the RGS80TSX2DGC11.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have better performance characteristics and lower losses compared to P-Channel IGBTs, making them a preferred choice for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making it more convenient for power control applications.

Maximum Power Dissipation (Abs): 555 W

High power dissipation capability allows for handling large amounts of power without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 1200 V

High voltage rating allows for safe operation in high voltage applications, providing reliability and stability.

Maximum Gate-Emitter Voltage: 30 V

The maximum gate-emitter voltage ensures safe and reliable gate control, preventing damage to the transistor.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for use in extreme environments, making it versatile and reliable in various conditions.

Maximum Collector Current (IC): 80 A

High collector current rating allows for handling large currents, making it suitable for high power applications.

Nominal Turn On Time (ton): 89 ns

Fast turn-on time allows for quick response in power control applications, improving efficiency and performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGS80TSX2DGC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn On Time (ton):

89 ns

Maximum VCEsat:

2.1 V

Trade Compliance

RGS80TSX2DGC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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