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RGS80TS65DHRC11

ROHM

RGS80TS65DHRC11 by ROHM

ROHM RGS80TS65DHRC11 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 73A, and Pmax of 272W. Ideal for power control applications due to its fast turn-off time (toff) of 291ns and high operating temperature range (-40 to 175°C). Suitable for automotive industry as it meets AEC-Q101 standard.

Median Price

$7.060

Lifecycle Status

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Farnell

UK . 28 parts In-Stock

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$3.170

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$2.100

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$1.540

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Newark

USA . 28 parts In-Stock

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$5.640

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$4.010

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$3.260

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Chip1Stop

Japan . 234 parts In-Stock

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$8.480

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$4.660

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$4.340

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$4.240

234

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Mouser Electronics

USA . 76 parts In-Stock

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$9.030

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76

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DigiKey

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$9.030

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$4.024

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Verical

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$4.555

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Nova Conductors

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50

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Continental Prestige Electronics

USA . 28 parts In-Stock

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$2.100

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$1.540

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Ampacity Inc.

Singapore . 95 parts In-Stock

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$3.200

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CoreStaff

Japan . 450 parts In-Stock

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$7.459

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$2.818

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Microchip USA

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USA . 500 parts In-Stock

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500

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Overview

Experience the power of innovation with the RGS80TS65DHRC11 by ROHM. As a leader in the industry, ROHM consistently delivers high-quality products like this insulated gate bipolar transistor for power control applications. With a maximum collector-emitter voltage of 650V and a maximum power dissipation of 272W, this N-channel transistor offers reliable performance and efficiency. Whether you're looking to optimize power management in industrial equipment or automotive systems, the RGS80TS65DHRC11 provides unmatched value, benefits, and advantages to meet your needs. Trust ROHM for cutting-edge technology that drives success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, increasing durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower ON-state resistance, allowing for efficient power control.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easy and efficient current flow, improving overall performance.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in power management systems.

Maximum VCEsat: 2.1 V

Low VCEsat minimizes power loss and improves efficiency in power control applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and mounting in various systems.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure connections and improves reliability in circuit designs.

Nominal Turn Off Time (toff): 291 ns

Fast turn-off time allows for precise control and efficient switching in power control applications.

No. of Terminals: 3

Simplified terminal configuration makes it easy to integrate into circuit designs.

Maximum Power Dissipation (Abs): 272 W

High power dissipation capability allows for handling of large power loads.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides secure mounting and heat dissipation for improved performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range ensures reliable performance even in high heat conditions.

Maximum Collector-Emitter Voltage: 650 V

High voltage tolerance makes it suitable for high voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high-performance characteristics and reliability in power control applications.

Maximum Gate-Emitter Voltage: 30 V

High gate-emitter voltage tolerance allows for precise control and efficient switching.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme cold conditions.

Maximum Collector Current (IC): 73 A

High collector current rating allows for handling of large currents in power control applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

Low gate-emitter threshold voltage ensures efficient turn-on and performance in power control applications.

Terminal Finish: TIN

Tin terminal finish provides excellent conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuit designs.

Nominal Turn On Time (ton): 62 ns

Fast turn-on time allows for quick response and efficient switching in power control applications.

Reference Standard: AEC-Q101

Complies with automotive quality standards, ensuring high reliability and durability in automotive applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGS80TS65DHRC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

291 ns

Nominal Turn On Time (ton):

62 ns

Maximum VCEsat:

2.1 V

Trade Compliance

RGS80TS65DHRC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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