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2SC4081U3T106

ROHM

2SC4081U3T106 by ROHM

ROHM 2SC4081U3T106 is a NPN BJT transistor with VCEsat of 0.4V, hFE of 120, and fT of 180MHz. Ideal for amplifier applications due to its low power dissipation (0.2W), high collector-emitter voltage (50V), and small outline package style.

Median Price

$0.065

Lifecycle Status

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4

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1k+

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Chip1Stop

Japan . 13,500 parts In-Stock

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$0.065

10k+ parts

$0.052

13,500

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$0.065

$0.052

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Nova Conductors

Japan . 10 parts In-Stock

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$0.095

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10

$0.095

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Vyrian

USA . 13,380 parts In-Stock

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13,380

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VNN

France . 2,788 parts In-Stock

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2,788

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Ampacity Inc.

Singapore . 13,270 parts In-Stock

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$0.055

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13,270

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.095

100+ parts

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1k+ parts

$0.090

10k+ parts

$0.088

2,000

$0.095

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$0.090

$0.088

Overview

Looking to amplify your electronic projects? Look no further than the 2SC4081U3T106 by ROHM. As a leading manufacturer in the industry, ROHM delivers high-quality small signal bipolar junction transistors that are perfect for amplifier applications. With a maximum VCEsat of 0.4V and a minimum DC current gain of 120, this NPN transistor offers superior performance and efficiency. Whether you're a hobbyist or a professional, this surface-mount transistor will enhance your designs with its reliability and precision. Discover the difference with ROHM today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other electronic circuits, making this transistor versatile.

Configuration: SINGLE

SINGLE configuration makes it easier to use in simple amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Surface mounting capability allows for easy integration into PCB designs.

Maximum VCEsat: 0.4 V

Low VCEsat ensures efficient performance with minimal power loss.

Package Shape: RECTANGULAR

Rectangular shape is common and convenient for PCB mounting.

Terminal Form: GULL WING

GULL WING terminals provide secure connections on the PCB.

No. of Terminals: 3

3 terminals provide essential connections for proper transistor operation.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation ensures the transistor stays within safe operating limits.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures reliable amplification of signals.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in various environments.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance minimizes signal distortion and ensures accurate amplification.

Maximum Collector-Emitter Voltage: 50 V

Safe voltage rating for typical amplifier applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.15 A

Sufficient collector current rating for most amplifier applications.

Terminal Position: DUAL

Dual terminal position allows for flexible PCB layout and connections.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency enables fast switching and high-frequency operation in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC4081U3T106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SC4081U3T106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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