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SBRD8360G-VF01

Onsemi

SBRD8360G-VF01 by Onsemi

SBRD8360G-VF01 by Onsemi is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.7V. It operates in temperatures ranging from -65 to 175 °C, making it suitable for power applications. This diode has a max reverse voltage of 60V and is designed for surface mount installation.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 3,392 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 658 parts In-Stock

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Problanco Electronics

Mexico . 8,175 parts In-Stock

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SupplyDigital Components

Austria . 7,100 parts In-Stock

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TANS Electronics

Latvia . 3,006 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 440 parts In-Stock

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Overview

Enhance your power applications with the SBRD8360G-VF01 by Onsemi, a high-quality Schottky rectifier diode designed to deliver top-notch performance. Manufactured by Onsemi, a trusted name in the industry, this diode offers customers reliable and efficient power management solutions. Whether you're working on automotive, industrial, or consumer electronics projects, this diode is the perfect choice for its low forward voltage drop, high current capability, and wide temperature range. Trust Onsemi's expertise and experience to bring value and benefits to your designs with the SBRD8360G-VF01.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the diode and ensures durability in various environmental conditions.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient operation and minimal power loss.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in demanding applications.

Terminal Finish: MATTE TIN

Matte tin finish offers good solderability and ensures secure electrical connections.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures without damage, making it suitable for reflow soldering processes.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification of alternating current, ensuring efficient conversion of AC to DC.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed, making them suitable for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 60 V

Suitable for applications requiring rectification of voltages up to 60V.

Technical Specifications

Diodes & Rectifiers SBRD8360G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

200 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRD8360G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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