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SBRD8350T4G-VF01

Onsemi

SBRD8350T4G-VF01 by Onsemi

SBRD8350T4G-VF01 by Onsemi is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.7V. It operates in temperatures ranging from -65 °C to 175°C, making it suitable for fast recovery power applications. This diode has a max reverse voltage of 50V and non-repetitive peak forward current of 75A, ideal for various electronic circuits.

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Overview

Discover the Onsemi SBRD8350T4G-VF01, a high-quality rectifier diode designed for fast recovery power applications. Manufactured by Onsemi, known for their superior products, this diode offers exceptional performance and reliability. With a maximum forward voltage of 0.7V and a maximum output current of 3A, this diode is perfect for various electronic projects. Whether you're working on power supplies, converters, or inverters, the SBRD8350T4G-VF01 provides value, efficiency, and peace of mind. Upgrade your designs with this top-notch diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Simplifies circuit design by only requiring one diode.

Surface Mount: YES

Easy to mount on circuit boards, saving time and space during assembly.

Maximum Reverse Current: 200 uA

Low reverse current helps in reducing power losses and improving efficiency.

Package Shape: RECTANGULAR

Standard shape for easier integration into various electronic devices.

No. of Terminals: 2

Simplifies connection in the circuit, reducing complexity.

Package Style (Meter): SMALL OUTLINE

Compact design saves space in the circuit layout.

Application: FAST RECOVERY POWER

Suitable for applications requiring fast recovery and high power capabilities.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments without risk of damage.

Minimum Operating Temperature: -65 °C

Suitable for use in low-temperature conditions as well.

Terminal Finish: Matte Tin (Sn) - annealed

Provides good electrical conductivity and corrosion resistance.

Terminal Position: SINGLE

Simplifies soldering and connection in the circuit.

Case Connection: CATHODE

Ease of circuit design and connection with clear cathode indication.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly process.

Peak Reflow Temperature °C: 260

Allows for high-temperature soldering without damage to the diode.

Reference Standard: AEC-Q101

Compliance with automotive quality standards for reliability and performance.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient power conversion.

Maximum Forward Voltage (VF): 0.7 V

Low forward voltage drop minimizes power loss and improves efficiency.

Maximum Output Current: 3 A

High output current capability for power applications.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching, ideal for high-frequency applications.

Terminal Form: GULL WING

Facilitates easy soldering and connection in surface mount applications.

Maximum Repetitive Peak Reverse Voltage: 50 V

Suitable for applications requiring reverse voltage protection up to 50 V.

Maximum Non Repetitive Peak Forward Current: 75 A

Capable of handling high forward currents for short durations.

Diode Element Material: SILICON

Silicon diodes offer good thermal stability and electrical characteristics for reliable operation.

Technical Specifications

Diodes & Rectifiers SBRD8350T4G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

200 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRD8350T4G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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