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SB05W05C

Onsemi

SB05W05C by Onsemi

The Onsemi SB05W05C is a Schottky rectifier diode with VF of 0.55V and output current of 0.5A. With 50V reverse voltage and 5A forward current, it's ideal for surface mount applications in electronics for efficient power management.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,682 parts In-Stock

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Digiode

USA . 1,483 parts In-Stock

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1,483

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Kepictronics

USA . 40,000 parts In-Stock

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SupplyDigital Components

Austria . 5,512 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Kulean Microsystems

USA . 2,625 parts In-Stock

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2,625

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TANS Electronics

Latvia . 2,337 parts In-Stock

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UHIMA Technologies

Türkiye . 587 parts In-Stock

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Corphita

USA . 582 parts In-Stock

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Corohmni

South Africa . 376 parts In-Stock

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Problanco Electronics

Mexico . 237 parts In-Stock

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Overview

Unlock a world of possibilities with the SB05W05C by Onsemi. Crafted with precision and excellence, this SCHOTTKY RECTIFIER DIODE is a game-changer in the Diodes & Rectifiers category. Perfect for a wide range of applications, this surface mount diode boasts a maximum output current of 0.5 A and a maximum repetitive peak reverse voltage of 50 V. Say goodbye to inefficiency and hello to reliable performance with the SB05W05C. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits this product brings to your projects.

Feature Benefit Bullets

Surface Mount: YES

The surface mount feature allows for easy and convenient installation onto circuit boards, saving time and effort during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for converting alternating current (AC) to direct current (DC), making this product suitable for different electronic applications.

Maximum Forward Voltage (VF): 0.55 V

The low forward voltage drop of 0.55 V helps in reducing power loss and improving overall efficiency of the circuit.

Maximum Output Current: 0.5 A

The high output current capacity of 0.5 A allows for handling larger loads without the risk of overheating or damage to the diode.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drops, making them ideal for high-frequency applications where efficiency is crucial.

Maximum Repetitive Peak Reverse Voltage: 50 V

The high reverse voltage rating of 50 V provides reliable protection against voltage spikes and reverse currents in the circuit.

Maximum Non Repetitive Peak Forward Current: 5 A

The high non-repetitive peak forward current rating of 5 A ensures that the diode can withstand short-term overload conditions without failing.

Technical Specifications

Diodes & Rectifiers SB05W05C attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

5 A

Maximum Output Current:

.5 A

Maximum Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SB05W05C Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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