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SB05-03Q

Onsemi

SB05-03Q by Onsemi

The Onsemi SB05-03Q is a Schottky rectifier diode with VF of 0.55V and max output current of 0.5A. It has a max reverse voltage of 30V and non-repetitive forward current of 5A. Ideal for surface mount applications in electronics requiring efficient power management.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,108 parts In-Stock

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Digiode

USA . 1,578 parts In-Stock

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1,578

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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TANS Electronics

Latvia . 7,280 parts In-Stock

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7,280

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Kulean Microsystems

USA . 4,421 parts In-Stock

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Problanco Electronics

Mexico . 4,080 parts In-Stock

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4,080

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SupplyDigital Components

Austria . 3,847 parts In-Stock

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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Corphita

USA . 1,168 parts In-Stock

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UHIMA Technologies

Türkiye . 675 parts In-Stock

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Corohmni

South Africa . 57 parts In-Stock

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Overview

Unlock the power of efficiency with the SB05-03Q by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality diodes and rectifiers designed for maximum performance. The SB05-03Q boasts a Schottky technology that ensures low forward voltage and high output current, making it ideal for a wide range of applications. From consumer electronics to industrial equipment, this rectifier diode offers unparalleled value and reliability. Experience the benefits of superior quality and efficiency with the SB05-03Q from Onsemi.

Feature Benefit Bullets

Config: SINGLE

The single configuration simplifies the design and installation process for the user.

Surface Mount: YES

Surface mount technology allows for compact and efficient placement on circuit boards, saving space and facilitating automated assembly.

Diode Type: RECTIFIER DIODE

Rectifier diodes are essential for converting alternating current (AC) to direct current (DC) in electronic devices, making this product suitable for power supply applications.

Maximum Forward Voltage (VF): 0.55 V

With a low forward voltage drop of 0.55V, this diode ensures minimal power loss and high efficiency in the circuit.

Maximum Output Current: 0.5 A

The maximum output current of 0.5A allows for reliable operation in low-power applications without risking diode failure due to overloading.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, making them ideal for high frequency and low voltage applications, resulting in efficient power conversion.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high repetitive peak reverse voltage rating of 30V ensures protection against voltage spikes and reverse polarity, enhancing the durability and reliability of the circuit.

Maximum Non Repetitive Peak Forward Current: 5 A

The ability to handle non-repetitive peak forward currents of up to 5A makes this diode suitable for applications that require occasional surge currents while maintaining stable operation.

Technical Specifications

Diodes & Rectifiers SB05-03Q attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

Maximum Output Current:

.5 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SB05-03Q Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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