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SB0503EC

Onsemi

SB0503EC by Onsemi

SB0503EC by Onsemi is a Schottky rectifier diode with a max output current of 0.5A and forward voltage of 0.65V. It has a reverse recovery time of 0.01us, making it suitable for applications requiring fast switching speeds in electronics such as power supplies and voltage regulators.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,114 parts In-Stock

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Digiode

USA . 469 parts In-Stock

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469

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Problanco Electronics

Mexico . 8,041 parts In-Stock

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TANS Electronics

Latvia . 6,715 parts In-Stock

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SupplyDigital Components

Austria . 4,667 parts In-Stock

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Corphita

USA . 1,115 parts In-Stock

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Kulean Microsystems

USA . 678 parts In-Stock

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UHIMA Technologies

Türkiye . 622 parts In-Stock

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Corohmni

South Africa . 270 parts In-Stock

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Overview

Discover the cutting-edge SB0503EC by Onsemi, a top-quality RECTIFIER DIODE that delivers unparalleled performance in a compact, surface-mount design. With a fast reverse recovery time of just 0.01 us and a maximum forward voltage of 0.65 V, this SCHOTTKY diode is ideal for a wide range of applications. Trust in Onsemi's reputation for excellence in manufacturing to provide you with a reliable and efficient solution for your electronic needs. Upgrade your projects today with the SB0503EC and experience the superior quality and value it brings to your designs.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies the setup and makes it easier to integrate into a circuit.

Surface Mount: YES

Surface mount capability allows for compact and efficient PCB designs.

Maximum Reverse Recovery Time: 0.01 us

Very fast reverse recovery time ensures efficient and quick operation of the diode.

Maximum Operating Temperature: 150 °C

High operating temperature range offers versatility and reliability in various applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC current in electronic circuits.

Maximum Forward Voltage (VF): 0.65 V

Low forward voltage drop results in minimal power loss and increased efficiency.

Maximum Output Current: 0.5 A

Suitable for low to medium power applications where a current rating of up to 0.5A is required.

Technology: SCHOTTKY

Schottky diode technology provides fast switching speeds and lower forward voltage drops compared to standard PN junction diodes.

Maximum Repetitive Peak Reverse Voltage: 30 V

High reverse voltage rating allows the diode to handle voltage spikes and fluctuations without breakdown.

Maximum Non Repetitive Peak Forward Current: 5 A

Capable of handling short-term high current surges without damage, ensuring reliability in transient conditions.

Technical Specifications

Diodes & Rectifiers SB0503EC attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.65 V

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.5 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SB0503EC Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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