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SB0503SH

Onsemi

SB0503SH by Onsemi

SB0503SH by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.56V and output current of 0.5A. With a fast reverse recovery time of 0.01us, it is ideal for applications requiring high-speed switching in small outline packages at temperatures up to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 489 parts In-Stock

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Vyrian

USA . 145 parts In-Stock

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Problanco Electronics

Mexico . 7,567 parts In-Stock

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SupplyDigital Components

Austria . 5,614 parts In-Stock

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Kulean Microsystems

USA . 2,281 parts In-Stock

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Corphita

USA . 2,212 parts In-Stock

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TANS Electronics

Latvia . 776 parts In-Stock

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UHIMA Technologies

Türkiye . 502 parts In-Stock

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Corohmni

South Africa . 201 parts In-Stock

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Overview

Experience the superior quality and performance of the SB0503SH by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch diodes and rectifiers that are reliable and efficient. This versatile product is perfect for a wide range of applications, providing customers with enhanced functionality and peace of mind. With its advanced technology and innovative design, the SB0503SH offers exceptional value, benefits, and advantages that will exceed your expectations. Upgrade your electronic devices with Onsemi's cutting-edge solutions today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the diode, making it a reliable choice for long-term use.

Config: SINGLE

Single configuration simplifies the setup and reduces complexity, making it easier to integrate into different circuits or systems.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and facilitating mass production.

Maximum Reverse Recovery Time: 0.01 us

The fast reverse recovery time of 0.01 us ensures efficient operation and minimal power loss, making it ideal for high-speed applications.

Package Shape: RECTANGULAR

Rectangular shape enables efficient and space-saving placement on the circuit board, ensuring optimal utilization of available space.

No. of Terminals: 6

Having 6 terminals provides flexibility in connectivity options, allowing for versatile use in various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and facilitates easy installation, making it suitable for applications where size constraints are critical.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this diode can withstand high temperatures without compromising performance, ensuring reliable operation in demanding environments.

Terminal Position: DUAL

Dual terminal position provides redundancy and improves reliability in the connection, ensuring stable performance in varied operating conditions.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it suitable for power supply and rectification applications.

Maximum Forward Voltage (VF): 0.56 V

Low forward voltage drop of 0.56 V reduces power loss and heat generation, improving energy efficiency and overall performance.

Maximum Output Current: 0.5 A

With a maximum output current of 0.5 A, this diode can handle moderate power requirements, suitable for various low to medium power applications.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speed and low forward voltage drop, enhancing efficiency and performance in high-frequency circuits.

Terminal Form: NO LEAD

No-lead terminal form simplifies installation and improves reliability by eliminating the risk of solder joint failure, ensuring a robust connection.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30 V, this diode can handle moderate voltage levels, suitable for a wide range of electronic applications.

Maximum Non Repetitive Peak Forward Current: 5 A

The high non-repetitive peak forward current of 5 A makes this diode capable of withstanding transient overloads, ensuring reliability in demanding conditions.

Diode Element Material: SILICON

Silicon diode element material offers high reliability, low leakage current, and consistent performance, making it a preferred choice for various electronic circuits.

Technical Specifications

Diodes & Rectifiers SB0503SH attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.56 V

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SB0503SH Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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