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SB05-03C

Onsemi

SB05-03C by Onsemi

The Onsemi SB05-03C is a Schottky rectifier diode with VF of 0.55V and max output current of 0.5A. With VRRM of 30V and IFRM of 5A, it's ideal for surface mount applications requiring high efficiency and low forward voltage drop. Perfect for power supplies, converters, and battery charging circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

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1k+

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Digiode

USA . 2,491 parts In-Stock

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Vyrian

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ACDS - Activité Composants Distribution Service

France . 1,249 parts In-Stock

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Kulean Microsystems

USA . 6,886 parts In-Stock

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Kepictronics

USA . 5,100 parts In-Stock

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TANS Electronics

Latvia . 5,023 parts In-Stock

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Problanco Electronics

Mexico . 3,175 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 2,099 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 624 parts In-Stock

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Corohmni

South Africa . 335 parts In-Stock

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Overview

Experience the superior quality and reliability of the Onsemi SB05-03C Schottky rectifier diode. Manufactured by Onsemi, a trusted leader in the industry, this diode offers exceptional performance in a compact surface-mount design. Ideal for a wide range of applications, from power supplies to battery charging, the SB05-03C provides unmatched efficiency with a low forward voltage of only 0.55 V and a maximum output current of 0.5 A. Trust Onsemi for cutting-edge technology and exceptional value in every product. Upgrade your electronics with the SB05-03C today!

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies the installation process and reduces complexity in circuit design.

Surface Mount: YES

Surface mount capability allows for efficient PCB layout and space-saving design.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this product suitable for rectification applications.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop of 0.55 V helps in minimizing power loss and improving efficiency in the circuit.

Maximum Output Current: 0.5 A

With a maximum output current of 0.5 A, this diode can handle moderate current loads effectively.

Technology: SCHOTTKY

Schottky diodes have faster switching speeds and lower forward voltage drop compared to conventional diodes, which is beneficial for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum reverse voltage of 30 V, this diode can withstand voltage reversals without breakdown, making it suitable for various circuit protection applications.

Maximum Non Repetitive Peak Forward Current: 5 A

The high non-repetitive peak forward current rating of 5 A allows the diode to handle short-duration peak currents without damage, making it reliable in transient conditions.

Technical Specifications

Diodes & Rectifiers SB05-03C attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

Maximum Output Current:

.5 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SB05-03C Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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