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SB05-09

Onsemi

SB05-09 by Onsemi

The Onsemi SB05-09 is a Schottky rectifier diode with a max forward voltage of 0.7V and output current of 0.5A. It has a max repetitive peak reverse voltage of 90V, making it suitable for applications requiring low power consumption in electronic circuits. The diode's through-hole terminal form and plastic/epoxy package body material provide durability and ease of installation in various devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,262 parts In-Stock

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Digiode

USA . 1,542 parts In-Stock

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1,542

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TANS Electronics

Latvia . 7,180 parts In-Stock

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7,180

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SupplyDigital Components

Austria . 3,933 parts In-Stock

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3,933

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Kulean Microsystems

USA . 3,824 parts In-Stock

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Corphita

USA . 2,349 parts In-Stock

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2,349

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UHIMA Technologies

Türkiye . 768 parts In-Stock

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768

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Corohmni

South Africa . 480 parts In-Stock

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Problanco Electronics

Mexico . 91 parts In-Stock

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Overview

Discover the SB05-09 by Onsemi, a high-quality Schottky rectifier diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. With its maximum output current of 0.5 A and maximum repetitive peak reverse voltage of 90 V, the SB05-09 provides customers with superior efficiency and durability. Upgrade your project with the SB05-09 and experience the benefits of reliable power management solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Config: SINGLE

Simplified design with a single configuration, easier to use and suitable for a wide range of applications.

Package Shape: RECTANGULAR

Compact shape allows for easy integration into different circuits and systems.

No. of Terminals: 3

Simple and straightforward connection setup, reducing complexity during installation.

Package Style (Meter): IN-LINE

Convenient in-line package style for easy mounting and connection in various electronic devices.

Terminal Position: SINGLE

Simplified terminal layout for easy installation and connection.

Diode Type: RECTIFIER DIODE

Efficiently converts alternating current (AC) to direct current (DC), making it ideal for rectification purposes.

Maximum Forward Voltage (VF): 0.7 V

Low forward voltage drop results in energy-efficient operation and minimal power loss.

Maximum Output Current: 0.5 A

Capable of handling moderate output currents, suitable for various electronic applications.

Technology: SCHOTTKY

Schottky diode technology provides fast switching speed and low forward voltage drop, enhancing overall performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure and reliable connections on a circuit board.

Maximum Repetitive Peak Reverse Voltage: 90 V

Can withstand high reverse voltages, ensuring reliable operation in different circuit configurations.

Maximum Non Repetitive Peak Forward Current: 10 A

Capable of handling occasional high peak currents without damage, providing added protection.

Diode Element Material: SILICON

Silicon diode element material offers stability and reliability under different operating conditions.

Technical Specifications

Diodes & Rectifiers SB05-09 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

Maximum Non Repetitive Peak Forward Current:

10 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Maximum Repetitive Peak Reverse Voltage:

90 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SB05-09 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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