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SB05-05P

Onsemi

SB05-05P by Onsemi

The Onsemi SB05-05P is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 0.5A. It has a max reverse voltage of 50V, making it suitable for applications requiring low power consumption in small outline packages. Ideal for surface mount designs needing efficient rectification with silicon diode element material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,075 parts In-Stock

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Vyrian

USA . 1,235 parts In-Stock

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Kepictronics

USA . 39,000 parts In-Stock

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TANS Electronics

Latvia . 7,621 parts In-Stock

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Problanco Electronics

Mexico . 6,886 parts In-Stock

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Kulean Microsystems

USA . 1,926 parts In-Stock

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Corphita

USA . 1,095 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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SupplyDigital Components

Austria . 868 parts In-Stock

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UHIMA Technologies

Türkiye . 414 parts In-Stock

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Corohmni

South Africa . 105 parts In-Stock

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Overview

Experience high-quality performance and reliability with the SB05-05P by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch technology and innovation in diodes and rectifiers. The SB05-05P is perfect for a variety of applications, offering customers exceptional value and benefits. With its Schottky technology and maximum output current of 0.5 A, this product provides efficient power management and optimal performance. Upgrade your electronic systems with the SB05-05P and enjoy the advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various environments.

Config: SINGLE

Simplified circuit design and easy to handle for applications requiring a single diode configuration.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Easily fits into standard layouts and designs, enhancing compatibility and ease of use.

No. of Terminals: 3

Provides necessary connections for the diode, ensuring proper functionality and ease of installation.

Package Style (Meter): SMALL OUTLINE

Compact size saves space on the PCB and allows for efficient use of available board real estate.

Terminal Position: SINGLE

Simplified and straightforward connectivity for hassle-free integration into circuits.

Diode Type: RECTIFIER DIODE

Suitable for converting alternating current (AC) to direct current (DC) efficiently and reliably.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop minimizes power loss and improves efficiency in rectifying applications.

Maximum Output Current: 0.5 A

Adequate output current capability for various low to moderate power applications.

Technology: SCHOTTKY

Schottky diode technology delivers fast switching speed and low forward voltage drop for efficient performance.

Terminal Form: FLAT

Flat terminals ensure secure and stable connections for reliable operation.

Maximum Repetitive Peak Reverse Voltage: 50 V

Sufficient reverse voltage rating for handling typical circuit requirements and protection against voltage spikes.

Maximum Non Repetitive Peak Forward Current: 5 A

Capable of handling short-term peak currents without damage, providing robustness and reliability.

Diode Element Material: SILICON

Silicon diode element material ensures stable and consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers SB05-05P attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SB05-05P Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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