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SB05-05NP

Onsemi

SB05-05NP by Onsemi

The Onsemi SB05-05NP is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 0.5A. Operating at up to 125 °C, it has a max reverse voltage of 50V and non-repetitive peak forward current of 5A. Ideal for applications requiring efficient power conversion in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,951 parts In-Stock

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Digiode

USA . 1,165 parts In-Stock

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Kulean Microsystems

USA . 6,500 parts In-Stock

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Problanco Electronics

Mexico . 6,224 parts In-Stock

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SupplyDigital Components

Austria . 1,013 parts In-Stock

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UHIMA Technologies

Türkiye . 768 parts In-Stock

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Corphita

USA . 227 parts In-Stock

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Corohmni

South Africa . 134 parts In-Stock

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TANS Electronics

Latvia . 46 parts In-Stock

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Overview

Experience superior quality and performance with the SB05-05NP by Onsemi. As a leading manufacturer in diodes and rectifiers, Onsemi delivers reliable products that exceed industry standards. The SB05-05NP is perfect for a variety of applications, offering customers exceptional value and benefits. Trust in the advanced technology of this Schottky rectifier diode to provide efficient and effective power management solutions. Elevate your projects with the SB05-05NP by Onsemi.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes the product easy to install and operate, suitable for simple applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand heat well, ensuring reliable performance in various environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are efficient in converting AC to DC, making this product ideal for power supply applications.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop minimizes power loss and improves efficiency in the circuit.

Maximum Output Current: 0.5 A

The high maximum output current rating allows the diode to handle higher loads without overheating, making it suitable for medium-power applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage, ideal for high-frequency and low-voltage applications.

Maximum Repetitive Peak Reverse Voltage: 50 V

The high reverse voltage rating provides added protection against voltage spikes and surges, ensuring the diode's longevity.

Maximum Non Repetitive Peak Forward Current: 5 A

With a high non-repetitive peak forward current rating, the diode can handle short-duration high current surges, enhancing its robustness in demanding conditions.

Technical Specifications

Diodes & Rectifiers SB05-05NP attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.5 A

Maximum Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Trade Compliance

SB05-05NP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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