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PZTA56

Onsemi

PZTA56 by Onsemi

PZTA56 by Onsemi is a PNP BJT transistor with 4 terminals, suitable for amplifier applications. It has a max power dissipation of 1.5W, hFE of 100, and can handle up to 80V collector-emitter voltage. This surface-mount transistor operates at temperatures up to 150 °C and has a transition frequency of 50MHz.

Median Price

$0.423

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 72 parts In-Stock

1+ parts

$0.552

100+ parts

$0.316

1k+ parts

$0.176

10k+ parts

$0.150

72

$0.552

$0.316

$0.176

$0.150

Newark

USA . 1,000 parts In-Stock

1+ parts

$0.608

100+ parts

$0.242

1k+ parts

$0.166

10k+ parts

-

1,000

$0.608

$0.242

$0.166

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Mouser Electronics

USA . 19,087 parts In-Stock

1+ parts

$0.760

100+ parts

$0.303

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19,087

$0.760

$0.303

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Chip1Stop

Japan . 3,900 parts In-Stock

1+ parts

$0.878

100+ parts

$0.280

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$0.231

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3,900

$0.878

$0.280

$0.231

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Verical

USA . 31,500 parts In-Stock

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$0.183

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$0.174

31,500

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$0.183

$0.174

Master Electronics

USA . 31,500 parts In-Stock

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$0.155

10k+ parts

$0.148

31,500

-

-

$0.155

$0.148

DigiKey

USA . 3,524 parts In-Stock

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$0.158

3,524

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$0.158

Farnell

UK . 2,175 parts In-Stock

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$0.407

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$0.179

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$0.162

2,175

-

$0.407

$0.179

$0.162

Element14

Singapore . 2,175 parts In-Stock

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-

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$0.439

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$0.302

10k+ parts

$0.273

2,175

-

$0.439

$0.302

$0.273

Rochester

USA . 62 parts In-Stock

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$0.185

1k+ parts

$0.153

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$0.137

62

-

$0.185

$0.153

$0.137

Distributors (In-Stock)

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Digiode

USA . 4,764 parts In-Stock

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$0.180

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4,764

$0.180

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Vyrian

USA . 4,979 parts In-Stock

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$0.189

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4,979

$0.189

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Component Electronics Inc.

Canada . 490 parts In-Stock

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$0.380

100+ parts

$0.290

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$0.250

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490

$0.380

$0.290

$0.250

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IBS Electronics

USA . 43,900 parts In-Stock

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$0.209

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$0.196

43,900

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$0.209

$0.196

Chip Stock

USA . 19,947 parts In-Stock

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19,947

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NAC Semi

USA . 8,000 parts In-Stock

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$0.260

8,000

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$0.260

Flip Electronics

USA . 7,790 parts In-Stock

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Bristol Electronics

USA . 7,559 parts In-Stock

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7,559

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Anansix

USA . 4,153 parts In-Stock

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Sensible Micro Corp

USA . 4,077 parts In-Stock

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Electronic Expediters

USA . 2,058 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,586 parts In-Stock

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Dan-Mar Components

USA . 1,586 parts In-Stock

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Cyclops Electronics Ltd

UK . 860 parts In-Stock

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Technoshack Inc.

Canada . 798 parts In-Stock

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Global Solutions Electronics Company

USA . 50 parts In-Stock

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50

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Goldney Electronics S.L.

Spain . 35 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 5,607 parts In-Stock

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$0.170

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5,607

$0.170

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Corohmni

South Africa . 294 parts In-Stock

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$0.174

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294

$0.174

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Component Stockers USA

USA . 76,674 parts In-Stock

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$0.190

100+ parts

$0.270

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$0.150

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$0.130

76,674

$0.190

$0.270

$0.150

$0.130

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 56,000 parts In-Stock

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Perfect Parts

USA . 45,203 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,926 parts In-Stock

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24,926

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A-Z Elektronik GmbH

Germany . 10,030 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 8,249 parts In-Stock

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8,249

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iodParts Technologies Inc.

India . 8,000 parts In-Stock

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TANS Electronics

Latvia . 4,635 parts In-Stock

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Continental Prestige Electronics

USA . 3,575 parts In-Stock

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$0.252

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$0.142

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$0.134

3,575

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$0.134

Supply Digital

USA . 2,541 parts In-Stock

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EMSNET (Excess)

USA . 2,500 parts In-Stock

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Kulean Microsystems

USA . 1,214 parts In-Stock

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UNI Independent Distributors

Spain . 348 parts In-Stock

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348

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UHIMA Technologies

Türkiye . 228 parts In-Stock

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228

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Problanco Electronics

Mexico . 203 parts In-Stock

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203

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Overview

Enhance your amplifier applications with the PZTA56 from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors that promise reliability and efficiency. The PZTA56, with its PNP configuration and maximum collector-emitter voltage of 80V, offers superior performance in a compact rectangular package. Enjoy the benefits of a high DC current gain of 100 and maximum power dissipation of 1.5W, ensuring optimal functionality and durability. Upgrade your electronic projects with the PZTA56 and experience unparalleled value and advantages that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for versatile use in various amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and simplifying manufacturing processes.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, ensuring reliable operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for use in a wide range of environments and applications without risk of overheating.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage provides flexibility and reliability in various circuit configurations.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in electronic circuits, making this transistor a dependable choice.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency allows for fast switching speeds and efficient signal amplification, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZTA56 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZTA56 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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