Loading...

PZTA42H6327XTSA1

Infineon Technologies

PZTA42H6327XTSA1 by Infineon Technologies

PZTA42H6327XTSA1 by Infineon Technologies is a small signal NPN bipolar junction transistor with a max collector-emitter voltage of 300V and a max collector current of 0.5A. It is commonly used in applications requiring high power dissipation, such as amplifiers and switching circuits.

Median Price

$0.182

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$0.759

100+ parts

$0.691

1k+ parts

$0.622

10k+ parts

-

1,000

$0.759

$0.691

$0.622

-

Verical

USA . 70,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.174

70,000

-

-

-

$0.174

Rochester

USA . 11,500 parts In-Stock

1+ parts

-

100+ parts

$0.156

1k+ parts

$0.129

10k+ parts

$0.115

11,500

-

$0.156

$0.129

$0.115

DigiKey

USA . 11,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.190

11,500

-

-

-

$0.190

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 633 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

10k+ parts

-

633

$0.130

-

-

-

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.173

100+ parts

-

1k+ parts

-

10k+ parts

-

150

$0.173

-

-

-

DigiKey Marketplace

USA . 28,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

28,000

-

-

-

-

Vyrian

USA . 18,756 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,756

-

-

-

-

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.492

10k+ parts

$0.454

3,000

-

-

$0.492

$0.454

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 19,124 parts In-Stock

1+ parts

$0.114

100+ parts

$0.111

1k+ parts

$0.111

10k+ parts

-

19,124

$0.114

$0.111

$0.111

-

Ampacity Inc.

Singapore . 18,729 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

-

18,729

$0.114

-

-

-

Corphita

USA . 266 parts In-Stock

1+ parts

$0.123

100+ parts

-

1k+ parts

-

10k+ parts

-

266

$0.123

-

-

-

Modulus Dynamics

Lithuania . 14,583 parts In-Stock

1+ parts

$0.151

100+ parts

$0.145

1k+ parts

$0.139

10k+ parts

-

14,583

$0.151

$0.145

$0.139

-

Corohmni

South Africa . 291 parts In-Stock

1+ parts

$0.151

100+ parts

-

1k+ parts

-

10k+ parts

-

291

$0.151

-

-

-

Continental Prestige Electronics

USA . 3,964 parts In-Stock

1+ parts

$0.173

100+ parts

-

1k+ parts

-

10k+ parts

$0.170

3,964

$0.173

-

-

$0.170

Argo Parts USA

USA . 3,173 parts In-Stock

1+ parts

$0.173

100+ parts

-

1k+ parts

-

10k+ parts

$0.168

3,173

$0.173

-

-

$0.168

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.173

100+ parts

-

1k+ parts

$0.164

10k+ parts

$0.161

50

$0.173

-

$0.164

$0.161

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.759

100+ parts

$0.691

1k+ parts

$0.622

10k+ parts

-

1,000

$0.759

$0.691

$0.622

-

Aztec Data Supply Inc.

USA . 3,519 parts In-Stock

1+ parts

$0.928

100+ parts

-

1k+ parts

-

10k+ parts

-

3,519

$0.928

-

-

-

Eastek

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.446

10k+ parts

-

4,000

-

-

$0.446

-

Microchip USA

USA . 3,587 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,587

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Overview

Discover the PZTA42H6327XTSA1, a high-quality Small Signal Bipolar Junction Transistor (BJT) by Infineon Technologies. As a leading manufacturer, Infineon guarantees exceptional performance and durability for your applications. Whether you're designing amplifiers or switching circuits, this NPN transistor offers unbeatable value, benefits, and advantages. With its surface mount capability and small outline package style, it's perfect for compact designs. Experience reliable operation with a maximum collector-emitter voltage of 300V and a minimum DC current gain of 40. Trust Infineon to deliver cutting-edge technology for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient amplification of signals, making this transistor ideal for use in audio and low-power applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, while also reducing the overall footprint of the product.

Surface Mount: YES

This surface mount capability enables easy and efficient assembly, enhancing productivity and reducing production costs.

Package Shape: RECTANGULAR

The rectangular shape allows for space-saving installation and effective heat dissipation, contributing to the overall reliability of the transistor.

Terminal Form: GULL WING

The gull wing terminal form ensures reliable electrical connections and enables automated assembly processes, increasing manufacturing efficiency.

No. of Terminals: 4

With four terminals, this transistor offers versatility in circuit connections and enables flexibility in its application.

Maximum Power Dissipation (Abs): 1.5 W

The high power dissipation capability allows the transistor to handle larger power loads, ensuring stability and reliability in demanding environments.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for easy integration into various electronic devices with limited space, offering design flexibility.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain ensures reliable and consistent amplification of signals, enhancing the overall performance of the transistor.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor remains stable and reliable even in demanding environments, expanding its range of applications.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage allows for efficient signal handling and ensures compatibility with a wide range of operating conditions.

Transistor Element Material: SILICON

The silicon material provides excellent electrical and thermal properties, contributing to the overall efficiency and reliability of the transistor.

Maximum Collector Current (IC): 0.5 A

The high maximum collector current enables the transistor to handle larger current loads, making it suitable for various power amplification applications.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and ensures reliable connections, enhancing the overall performance of the transistor.

Case Connection: COLLECTOR

The case connection to the collector provides efficient heat dissipation, ensuring stable operation of the transistor even in high-power applications.

Maximum Time At Peak Reflow Temperature (s): 30

This specification indicates the maximum time the transistor can withstand peak reflow temperatures during assembly, contributing to its durability and reliability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability allows for reliable and efficient assembly processes, ensuring high-quality soldering and connection.

Nominal Transition Frequency (fT): 70 MHz

The high nominal transition frequency enables the transistor to switch rapidly and handle high-frequency signals accurately, making it suitable for applications requiring high-speed performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZTA42H6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZTA42H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19