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PZTA42

Onsemi

PZTA42 by Onsemi

PZTA42 by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 1.5W Ptot. Ideal for amplifier applications, it has hFE of 40 and fT of 50MHz. Its Gull Wing terminals make it suitable for surface mount designs in a small outline package.

Median Price

$0.223

Lifecycle Status

Suppliers In-Stock

56

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 4,000 parts In-Stock

1+ parts

$0.095

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$0.095

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$0.095

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4,000

$0.095

$0.095

$0.095

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Farnell

UK . 30,955 parts In-Stock

1+ parts

$0.205

100+ parts

$0.075

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$0.071

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30,955

$0.205

$0.075

$0.071

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Adafruit Industries

USA . 70 parts In-Stock

1+ parts

$0.223

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$0.223

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$0.223

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$0.223

$0.223

$0.223

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Mouser Electronics

USA . 27,161 parts In-Stock

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$0.400

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$0.156

1k+ parts

$0.092

10k+ parts

$0.066

27,161

$0.400

$0.156

$0.092

$0.066

DigiKey

USA . 11,997 parts In-Stock

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$0.400

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$0.156

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$0.103

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$0.092

11,997

$0.400

$0.156

$0.103

$0.092

Element14

Singapore . 17,245 parts In-Stock

1+ parts

$0.707

100+ parts

$0.298

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$0.223

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$0.180

17,245

$0.707

$0.298

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Flip Electronics (Authorized)

USA . 5,384 parts In-Stock

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Verical

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Distrelec

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Freelance Electronics

USA . 4 parts In-Stock

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USA . 5,384 parts In-Stock

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Maritex

Poland . 767 parts In-Stock

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Digiode

USA . 4,728 parts In-Stock

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Poland . 3,993 parts In-Stock

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3,993

$0.370

$0.149

$0.091

$0.085

Bristol Electronics

USA . 5,130 parts In-Stock

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$0.375

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$0.188

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$0.075

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5,130

$0.375

$0.188

$0.075

$0.056

Nova Conductors

Japan . 650 parts In-Stock

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Component Electronics Inc.

Canada . 1,549 parts In-Stock

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$0.290

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Chip Stock

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First Choice Components Inc.

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Semi Source

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Inventory MP

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Prism Electronics

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Ack Elektronik San.Tic.Ltd.Sti

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ACDS - Activité Composants Distribution Service

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 120 parts In-Stock

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UK . 53 parts In-Stock

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Corohmni

South Africa . 463 parts In-Stock

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Semicontronic

India . 5,239 parts In-Stock

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Corphita

USA . 5,744 parts In-Stock

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AZTECH Wire

Italy . 7,601 parts In-Stock

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Advanced Electronics

New Zealand . 70 parts In-Stock

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Modulus Dynamics

Lithuania . 18,687 parts In-Stock

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$0.358

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$0.344

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$0.329

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Continental Prestige Electronics

USA . 6,140 parts In-Stock

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$0.369

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Netroflash

USA . 2,000 parts In-Stock

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$0.369

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Argo Parts USA

USA . 1,558 parts In-Stock

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$0.366

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Aztec Data Supply Inc.

USA . 547 parts In-Stock

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$0.404

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Component Stockers USA

USA . 12,883 parts In-Stock

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$0.760

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$0.300

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$0.280

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Microchip USA

USA . 3,522 parts In-Stock

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$3.431

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Computer Components Inc. - USA

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Overview

Unleash the power of the PZTA42 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for precision and reliability. Manufactured by Onsemi, this NPN transistor offers exceptional performance in amplifier applications with its compact design and advanced technology. With a maximum power dissipation of 1.5W and a maximum collector-emitter voltage of 300V, the PZTA42 delivers unmatched value and efficiency to customers. Trust Onsemi for outstanding quality and innovation in electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and reduces complexity in the amplifier setup.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and providing efficient assembly.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 ensures stable and consistent amplification in the transistor circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand harsh environmental conditions.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating of 300V allows for versatile use in a wide range of voltage applications.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5A ensures sufficient current handling capability for amplifier circuits.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency of 50MHz allows for fast switching speeds and high-frequency performance in amplification tasks.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZTA42 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZTA42 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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