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PZTA42T1

Onsemi

PZTA42T1 by Onsemi

PZTA42T1 by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 1.5W in a compact SOT-223 package. Suitable for surface mount designs requiring reliable switching performance at up to 150°C operating temperature.

Median Price

$0.080

Lifecycle Status

Suppliers In-Stock

35

In-Stock Inventory

1k+

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DF Sales Co.

USA . 2,846 parts In-Stock

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$0.080

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DF Sales Co.

USA . 2,846 parts In-Stock

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Component Electronics Inc.

Canada . 1,417 parts In-Stock

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Freddi Giovanni

Italy . 13,000 parts In-Stock

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PC Components Company LLC

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Electronic Expediters

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ComSIT Distribution GmbH

Germany . 3,780 parts In-Stock

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ComSIT USA

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Semi Source

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Connector Distribution Corp

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Right Parts Inc.

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A&K Electronics

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Rotakorn

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First Choice Components Inc.

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Digiode

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R&J Components

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Bristol Electronics

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Dan-Mar Components

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Mil-Aero Solutions, Inc.

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Beltway Electronics Company

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Manoshevitz Elec. Sales

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Prism Electronics

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ACDS - Activité Composants Distribution Service

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Odintec Ltd.

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Vyrian

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ABC Electronics Ltd.

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Corel Iberica Componentes, S.L.

Spain . 410 parts In-Stock

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Inland Empire Components Inc.

USA . 390 parts In-Stock

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NPI Materials, Inc.

USA . 316 parts In-Stock

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Electronics Depot

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Nova Conductors

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LittleDiode

UK . 4 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 149 parts In-Stock

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Aztec Data Supply Inc.

USA . 315 parts In-Stock

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AZTECH Wire

Italy . 560 parts In-Stock

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$7.817

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Ampacity Inc.

Singapore . 760 parts In-Stock

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RC Electronics

USA . 63,000 parts In-Stock

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Kepictronics

USA . 56,000 parts In-Stock

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TANS Electronics

Latvia . 6,270 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 2,974 parts In-Stock

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Corphita

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J Silver Components DBA - Lantern Electronics

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Cyclops Electronics Ltd (Excess)

UK . 1,671 parts In-Stock

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UHIMA Technologies

Türkiye . 881 parts In-Stock

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Glotronic Ltd.

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Assy Fe

Spain . 798 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 736 parts In-Stock

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Argo Parts USA

USA . 699 parts In-Stock

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Continental Prestige Electronics

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality PZTA42T1 Small Signal Bipolar Junction Transistor from Onsemi. This NPN transistor offers reliability, efficiency, and versatility in a compact rectangular package, making it ideal for a wide range of applications. Whether you're designing amplifiers, switches, or signal processing circuits, this transistor's 300V maximum collector-emitter voltage and 1.5W power dissipation ensure optimal performance. Trust Onsemi's expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Elevate your designs with the PZTA42T1 and experience the benefits of superior quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this transistor versatile and suitable for various circuits.

Configuration: SINGLE

Simplifies circuit design by having only one transistor in the package, reducing the complexity of the overall system.

Surface Mount: YES

Facilitates easy mounting on circuit boards, saving space and allowing for efficient production processes.

Maximum Power Dissipation (Abs): 1.5 W

Can handle relatively high power levels, making it suitable for applications that require moderate power dissipation.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments, ensuring reliable performance under varying conditions.

Maximum Collector-Emitter Voltage: 300 V

Capable of handling high voltage levels, making it suitable for applications where voltage spikes may occur.

Nominal Transition Frequency (fT): 50 MHz

Provides high frequency response, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZTA42T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZTA42T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-549-1262, 5961015491262

NIIN

015491262

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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