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PZTA42T1G

Onsemi

PZTA42T1G by Onsemi

PZTA42T1G by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications requiring high voltage and current capabilities in a compact SOT-223 package.

Median Price

$0.197

Lifecycle Status

Suppliers In-Stock

48

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 103,915 parts In-Stock

1+ parts

$0.303

100+ parts

$0.099

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$0.099

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Arrow

USA . 12,587 parts In-Stock

1+ parts

$0.314

100+ parts

$0.124

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$0.112

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$0.103

12,587

$0.314

$0.124

$0.112

$0.103

Mouser Electronics

USA . 14,841 parts In-Stock

1+ parts

$0.580

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$0.230

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$0.155

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14,841

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Adafruit Industries

USA . 600 parts In-Stock

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$1.323

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$1.256

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$1.256

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$1.323

$1.256

$1.256

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EBV Elektronik

Germany . 511,000 parts In-Stock

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Future Electronics

Canada . 85,000 parts In-Stock

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Verical

USA . 76,000 parts In-Stock

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$0.147

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Master Electronics

USA . 76,000 parts In-Stock

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$0.125

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Element14

Singapore . 53,525 parts In-Stock

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$0.324

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$0.181

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$0.177

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Newark

USA . 19,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 12,000 parts In-Stock

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Rochester

USA . 1,550 parts In-Stock

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$0.129

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$0.095

1,550

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$0.095

Chip1Stop

Japan . 1,320 parts In-Stock

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$0.197

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Distributors (In-Stock)

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Digiode

USA . 1,360 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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TME

Poland . 620 parts In-Stock

1+ parts

$0.450

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$0.202

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$0.119

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620

$0.450

$0.202

$0.119

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Maritex

Poland . 27,017 parts In-Stock

1+ parts

$0.707

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$0.167

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$0.120

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$0.100

27,017

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$0.167

$0.120

$0.100

IBS Electronics

USA . 1,463,000 parts In-Stock

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$0.175

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NAC Semi

USA . 944,000 parts In-Stock

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Sensible Micro Corp

USA . 278,464 parts In-Stock

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Chip Stock

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Vyrian

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Cyclops Electronics Ltd

UK . 52,344 parts In-Stock

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Goldney Electronics S.L.

Spain . 4,956 parts In-Stock

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A2Z Electronics, Inc.

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Bristol Electronics

USA . 2,390 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,062 parts In-Stock

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ComSIT USA

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Kronex Distribution GmbH

USA . 1,922 parts In-Stock

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Martec Srl

Italy . 1,645 parts In-Stock

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Inventory MP

USA . 1,180 parts In-Stock

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Micros

Poland . 1,000 parts In-Stock

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Partservice

France . 1,000 parts In-Stock

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$0.106

Micros sp.j. W. Kędra i J. Lic

Poland . 1,000 parts In-Stock

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Speed Components Ltd

Israel . 919 parts In-Stock

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Component Sense

UK . 813 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 583 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 443 parts In-Stock

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BCID Electronics Ltd.

Israel . 400 parts In-Stock

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Lantek

USA . 219 parts In-Stock

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Semi Source

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Microfarads

USA . 117 parts In-Stock

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PC Components Company LLC

USA . 60 parts In-Stock

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Elcom Components

USA . 39 parts In-Stock

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NexGen Digital

USA . 10 parts In-Stock

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Semtec, LLC

USA . 8 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 118,439 parts In-Stock

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$0.072

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Semicontronic

India . 120,578 parts In-Stock

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$0.077

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$0.075

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$0.075

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$0.077

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Corohmni

South Africa . 285 parts In-Stock

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$0.085

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Component Stockers USA

USA . 98,834 parts In-Stock

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$0.090

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$0.080

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$0.070

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98,834

$0.090

$0.080

$0.070

$0.070

Corphita

USA . 1,924 parts In-Stock

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$0.094

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Argo Parts USA

USA . 4,292 parts In-Stock

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$0.104

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Aranea Global

USA . 1,000 parts In-Stock

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$0.112

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$0.107

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$0.112

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$1.323

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$1.256

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$1.256

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600

$1.323

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$1.256

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Aztec Data Supply Inc.

USA . 186 parts In-Stock

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$1.897

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Perfect Parts

USA . 8,207,657 parts In-Stock

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Authorized Procurement Solutions

USA . 268,000 parts In-Stock

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GreenTree Electronics

Israel . 167,000 parts In-Stock

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Glotronic Ltd.

UK . 136,800 parts In-Stock

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Continental Prestige Electronics

USA . 101,078 parts In-Stock

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$0.188

1k+ parts

$0.139

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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RC Electronics

USA . 87,333 parts In-Stock

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$0.110

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$0.100

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$0.100

Kepictronics

USA . 70,233 parts In-Stock

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Eastek

USA . 25,000 parts In-Stock

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$0.114

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Infinite Electronics LLP (Excess)

. 15,002 parts In-Stock

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Lixinc

USA . 14,070 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,960 parts In-Stock

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SupplyDigital Components

Austria . 8,205 parts In-Stock

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TANS Electronics

Latvia . 6,694 parts In-Stock

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Benley Electronics

USA . 5,637 parts In-Stock

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Problanco Electronics

Mexico . 4,727 parts In-Stock

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Kulean Microsystems

USA . 3,862 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,413 parts In-Stock

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UHIMA Technologies

Türkiye . 828 parts In-Stock

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Overview

Discover the high-quality PZTA42T1G by Onsemi, a top-notch NPN Small Signal Bipolar Junction Transistor designed for a variety of applications. From amplification to switching, this transistor offers reliability and efficiency, thanks to Onsemi's reputation for superior manufacturing. With a maximum collector-emitter voltage of 300V and a minimum DC current gain of 40, this transistor provides unmatched performance and durability. Upgrade your electronic projects with the PZTA42T1G and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for audio and signal processing.

Configuration: SINGLE

The single configuration simplifies circuit design and PCB layout, making this transistor easy to incorporate into projects.

Surface Mount: YES

The surface mount capability allows for easy and efficient soldering onto a PCB, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it space-efficient and easy to position on a circuit board.

Terminal Form: GULL WING

The gull wing terminal form facilitates reliable electrical connections and enhances solder joint strength.

No. of Terminals: 4

With 4 terminals, this transistor provides flexibility in circuit connections and allows for multiple connection options.

Maximum Power Dissipation (Abs): 1.5 W

The high power dissipation rating ensures the transistor can handle high load conditions without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain ensures consistent and reliable amplification performance in various applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor is suitable for use in demanding environments.

Maximum Collector-Emitter Voltage: 300 V

The high collector-emitter voltage rating allows for the transistor to be used in high voltage applications.

Transistor Element Material: SILICON

Silicon is a widely-used semiconductor material known for its excellent electrical properties and reliability.

Maximum Collector Current (IC): 0.5 A

The maximum collector current rating indicates the transistor's ability to handle current flow without damage.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and allows for easy connection to external components.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies the design and layout of the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

This specification indicates the maximum time the transistor can be exposed to peak reflow temperature during soldering.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures reliable solder joints and proper bonding during the assembly process.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency allows for efficient signal processing and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZTA42T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZTA42T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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