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NUP412VP5T5G

Onsemi

NUP412VP5T5G by Onsemi

NUP412VP5T5G by Onsemi is a transient suppression device with common anode configuration, 4 elements, and 12V breakdown voltage. It is a surface-mount diode with max non-repetitive peak reverse power dissipation of 65W. Ideal for applications requiring protection against voltage transients in electronic circuits.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,463,026 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.351

2,463,026

-

-

-

$0.351

Rochester

USA . 2,436,050 parts In-Stock

1+ parts

-

100+ parts

$0.118

1k+ parts

$0.098

10k+ parts

$0.087

2,436,050

-

$0.118

$0.098

$0.087

DigiKey

USA . 2,436,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

2,436,050

-

-

-

$0.150

Verical

USA . 1,752,144 parts In-Stock

1+ parts

-

100+ parts

-

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$0.109

1,752,144

-

-

-

$0.109

Element14

Singapore . 43 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.350

10k+ parts

$0.206

43

-

$0.357

$0.350

$0.206

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,333 parts In-Stock

1+ parts

$0.096

100+ parts

-

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10k+ parts

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2,333

$0.096

-

-

-

Chip Stock

USA . 72,000 parts In-Stock

1+ parts

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72,000

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ACDS - Activité Composants Distribution Service

France . 8,000 parts In-Stock

1+ parts

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8,000

-

-

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Bristol Electronics

USA . 8,000 parts In-Stock

1+ parts

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8,000

-

-

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Dan-Mar Components

USA . 8,000 parts In-Stock

1+ parts

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100+ parts

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8,000

-

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Vyrian

USA . 6,389 parts In-Stock

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6,389

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 43 parts In-Stock

1+ parts

$0.045

100+ parts

-

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43

$0.045

-

-

-

Ampacity Inc.

Singapore . 1,640,556 parts In-Stock

1+ parts

$0.086

100+ parts

-

1k+ parts

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10k+ parts

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1,640,556

$0.086

-

-

-

Corphita

USA . 709 parts In-Stock

1+ parts

$0.091

100+ parts

-

1k+ parts

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10k+ parts

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709

$0.091

-

-

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Corohmni

South Africa . 239 parts In-Stock

1+ parts

$0.101

100+ parts

-

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239

$0.101

-

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AZTECH Wire

Italy . 694 parts In-Stock

1+ parts

$9.280

100+ parts

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694

$9.280

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Kepictronics

USA . 87,972 parts In-Stock

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87,972

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RC Electronics

USA . 66,545 parts In-Stock

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66,545

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Perfect Parts

USA . 17,696 parts In-Stock

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17,696

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Futuretech Components

Singapore . 7,980 parts In-Stock

1+ parts

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7,980

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TANS Electronics

Latvia . 6,242 parts In-Stock

1+ parts

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6,242

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Kulean Microsystems

USA . 4,672 parts In-Stock

1+ parts

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4,672

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SupplyDigital Components

Austria . 4,572 parts In-Stock

1+ parts

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4,572

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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2,400

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Problanco Electronics

Mexico . 726 parts In-Stock

1+ parts

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726

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UHIMA Technologies

Türkiye . 164 parts In-Stock

1+ parts

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164

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Overview

Enhance your electronic devices with the NUP412VP5T5G by Onsemi, a top-of-the-line transient suppression device that guarantees superior quality and reliability. Manufactured by Onsemi, a renowned leader in the industry, this product offers unmatched performance and protection for your valuable equipment. Designed with a common anode configuration and four elements, this small outline package is perfect for a wide range of applications. Trust the NUP412VP5T5G to provide maximum power dissipation and optimal breakdown voltage, ensuring the safety and longevity of your devices. Upgrade your electronics today with this high-tech solution from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Config: COMMON ANODE, 4 ELEMENTS

Common anode configuration allows for easy connection in circuits, while 4 elements provide enhanced transient suppression capabilities.

Maximum Non Repetitive Peak Reverse Power Dissipation: 65 W

High power dissipation capability ensures the device can handle transient surges effectively, protecting connected devices.

Nominal Breakdown Voltage: 12 V

Provides reliable protection by effectively clamping voltage spikes above 12 V.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without compromising performance, making it suitable for a wide range of applications.

Technical Specifications

Transient Suppression Devices NUP412VP5T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Maximum Breakdown Voltage:

12.7 V

Minimum Breakdown Voltage:

11.4 V

Nominal Breakdown Voltage:

12 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

65 W

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

9 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NUP412VP5T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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