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NTR3A30PZT1G

Onsemi

NTR3A30PZT1G by Onsemi

NTR3A30PZT1G by Onsemi is a P-CHANNEL FET with 3A max drain current and 1.58W power dissipation. Ideal for applications requiring high temperature resistance up to 150°C, such as automotive electronics and industrial control systems.

Median Price

$0.398

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 10 parts In-Stock

1+ parts

$1.100

100+ parts

-

1k+ parts

-

10k+ parts

$0.242

10

$1.100

-

-

$0.242

Mouser Electronics

USA . 31,179 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.260

31,179

-

-

-

$0.260

Flip Electronics (Authorized)

USA . 9,000 parts In-Stock

1+ parts

-

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9,000

-

-

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Verical

USA . 3,642 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.384

10k+ parts

-

3,642

-

-

$0.384

-

Farnell

UK . 947 parts In-Stock

1+ parts

-

100+ parts

$0.412

1k+ parts

$0.335

10k+ parts

-

947

-

$0.412

$0.335

-

Rochester

USA . 358 parts In-Stock

1+ parts

-

100+ parts

$0.307

1k+ parts

$0.255

10k+ parts

$0.228

358

-

$0.307

$0.255

$0.228

Element14

Singapore . 277 parts In-Stock

1+ parts

-

100+ parts

$0.428

1k+ parts

$0.348

10k+ parts

-

277

-

$0.428

$0.348

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,161 parts In-Stock

1+ parts

$0.239

100+ parts

-

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10k+ parts

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1,161

$0.239

-

-

-

Maritex

Poland . 311 parts In-Stock

1+ parts

$0.679

100+ parts

$0.390

1k+ parts

$0.357

10k+ parts

$0.314

311

$0.679

$0.390

$0.357

$0.314

Nova Conductors

Japan . 86 parts In-Stock

1+ parts

$1.000

100+ parts

-

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86

$1.000

-

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Flip Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

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9,000

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Vyrian

USA . 6,649 parts In-Stock

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6,649

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,616 parts In-Stock

1+ parts

$0.214

100+ parts

-

1k+ parts

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10k+ parts

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6,616

$0.214

-

-

-

Corphita

USA . 2,080 parts In-Stock

1+ parts

$0.227

100+ parts

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1k+ parts

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2,080

$0.227

-

-

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Corohmni

South Africa . 398 parts In-Stock

1+ parts

$0.234

100+ parts

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398

$0.234

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Continental Prestige Electronics

USA . 1,017 parts In-Stock

1+ parts

$0.686

100+ parts

$0.394

1k+ parts

$0.252

10k+ parts

$0.216

1,017

$0.686

$0.394

$0.252

$0.216

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

$0.950

10k+ parts

$0.930

2,000

$1.000

-

$0.950

$0.930

RC Electronics

USA . 81,360 parts In-Stock

1+ parts

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81,360

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Kepictronics

USA . 33,846 parts In-Stock

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33,846

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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Lixinc

USA . 16,572 parts In-Stock

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16,572

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TANS Electronics

Latvia . 7,087 parts In-Stock

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7,087

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Kulean Microsystems

USA . 6,252 parts In-Stock

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6,252

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Problanco Electronics

Mexico . 3,541 parts In-Stock

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3,541

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-

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

1+ parts

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2,700

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SupplyDigital Components

Austria . 619 parts In-Stock

1+ parts

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619

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UHIMA Technologies

Türkiye . 346 parts In-Stock

1+ parts

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346

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Futuretech Components

Singapore . 300 parts In-Stock

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300

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Overview

Unlock the full potential of your electronic devices with the NTR3A30PZT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Small Signal Field Effect Transistors that offer exceptional performance and reliability. This P-CHANNEL transistor is designed for a wide range of applications, providing customers with unmatched value and benefits. Upgrade your electronics with the NTR3A30PZT1G today and experience superior quality and efficiency like never before.

Feature Benefit Bullets

Polarity or Channel Type:

P-CHANNEL - Allows for efficient current flow in the desired direction, making it suitable for specific circuit applications.

Configuration:

SINGLE - Simplifies circuit design and increases reliability by reducing the number of components.

Surface Mount:

YES - Enables easy and compact PCB assembly, saving space and improving overall device performance.

Maximum Drain Current (Abs):

3 A - Capable of handling high current loads, ensuring stable and reliable operation under demanding conditions.

Maximum Power Dissipation (Abs):

1.58 W - Provides sufficient power handling capability for various applications without overheating.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Offers high switching speeds and low power consumption, enhancing overall efficiency.

Maximum Operating Temperature:

150 °C - Allows for operation in a wide range of temperatures, ensuring reliability in different environments.

Terminal Finish:

MATTE TIN - Provides a durable and corrosion-resistant finish, enhancing the longevity of the component.

Maximum Time At Peak Reflow Temperature (s):

30 - Simplifies the soldering process and reduces the risk of damage to the component during assembly.

Peak Reflow Temperature °C:

260 - Withstands high reflow temperatures during assembly, ensuring mechanical stability and performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR3A30PZT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTR3A30PZT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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