Loading...

NTR3C21NZT1G

Onsemi

NTR3C21NZT1G by Onsemi

NTR3C21NZT1G by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage, 0.47W power dissipation, and 3.6A max drain current. Ideal for switching applications in small outline packages, it operates b/w -55 to 150 °C with 0.024 ohm on-resistance.

Median Price

$0.187

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,000 parts In-Stock

1+ parts

$0.102

100+ parts

$0.102

1k+ parts

-

10k+ parts

-

3,000

$0.102

$0.102

-

-

Arrow

USA . 16,000 parts In-Stock

1+ parts

$0.192

100+ parts

$0.106

1k+ parts

-

10k+ parts

-

16,000

$0.192

$0.106

-

-

Mouser Electronics

USA . 63,837 parts In-Stock

1+ parts

$0.580

100+ parts

$0.227

1k+ parts

$0.153

10k+ parts

$0.135

63,837

$0.580

$0.227

$0.153

$0.135

Distrelec

Netherlands . 11,950 parts In-Stock

1+ parts

$0.596

100+ parts

$0.466

1k+ parts

$0.379

10k+ parts

-

11,950

$0.596

$0.466

$0.379

-

Chip1Stop

Japan . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.132

42,000

-

-

-

$0.132

Farnell

UK . 5,886 parts In-Stock

1+ parts

-

100+ parts

$0.187

1k+ parts

$0.168

10k+ parts

$0.151

5,886

-

$0.187

$0.168

$0.151

Element14

Singapore . 5,886 parts In-Stock

1+ parts

-

100+ parts

$0.280

1k+ parts

$0.221

10k+ parts

$0.217

5,886

-

$0.280

$0.221

$0.217

Verical

USA . 2,316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.108

10k+ parts

-

2,316

-

-

$0.108

-

DigiKey

USA . 2,311 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

2,311

-

-

-

$0.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,896 parts In-Stock

1+ parts

$0.105

100+ parts

-

1k+ parts

-

10k+ parts

-

1,896

$0.105

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.165

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.165

-

-

-

TME

Poland . 1,615 parts In-Stock

1+ parts

$0.550

100+ parts

$0.204

1k+ parts

$0.133

10k+ parts

$0.109

1,615

$0.550

$0.204

$0.133

$0.109

Flip Electronics

USA . 200,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

200,000

-

-

-

-

Chip Stock

USA . 66,618 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

66,618

-

-

-

-

Semtec, LLC

USA . 58,090 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

58,090

-

-

-

-

Martec Srl

Italy . 40,379 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40,379

-

-

-

-

Vyrian

USA . 38,545 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

38,545

-

-

-

-

IBS Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.116

15,000

-

-

-

$0.116

Cyclops Electronics Ltd

UK . 13,607 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,607

-

-

-

-

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.121

6,000

-

-

-

$0.121

Prism Electronics

USA . 26 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 38,316 parts In-Stock

1+ parts

$0.094

100+ parts

-

1k+ parts

-

10k+ parts

-

38,316

$0.094

-

-

-

Semicontronic

India . 38,590 parts In-Stock

1+ parts

$0.097

100+ parts

$0.095

1k+ parts

$0.094

10k+ parts

-

38,590

$0.097

$0.095

$0.094

-

Corphita

USA . 1,124 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

-

1,124

$0.100

-

-

-

Corohmni

South Africa . 285 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

-

285

$0.108

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.165

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

$0.165

-

-

-

Continental Prestige Electronics

USA . 13,681 parts In-Stock

1+ parts

$0.398

100+ parts

$0.225

1k+ parts

$0.138

10k+ parts

$0.110

13,681

$0.398

$0.225

$0.138

$0.110

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.375

100+ parts

$1.306

1k+ parts

$1.306

10k+ parts

-

100

$1.375

$1.306

$1.306

-

Aztec Data Supply Inc.

USA . 300 parts In-Stock

1+ parts

$1.410

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$1.410

-

-

-

Kepictronics

USA . 65,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

65,000

-

-

-

-

Lixinc

USA . 14,529 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14,529

-

-

-

-

iodParts Technologies Inc.

India . 6,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,400

-

-

-

-

TANS Electronics

Latvia . 3,556 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,556

-

-

-

-

Problanco Electronics

Mexico . 2,496 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,496

-

-

-

-

Argo Parts USA

USA . 2,340 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,340

-

-

-

-

SupplyDigital Components

Austria . 2,083 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,083

-

-

-

-

Kulean Microsystems

USA . 1,239 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,239

-

-

-

-

UHIMA Technologies

Türkiye . 862 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

862

-

-

-

-

Overview

Enhance your electronic projects with the NTR3C21NZT1G by Onsemi! As a leading manufacturer, Onsemi delivers top-quality small signal field effect transistors for various applications. This N-channel transistor with built-in diode is perfect for switching tasks, offering reliability and efficiency. With its compact design and high power dissipation capabilities, this transistor is a versatile solution for your circuit needs. Trust Onsemi for superior performance and innovative technology that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and helps in protecting the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer better performance and efficiency compared to P-channel transistors in most applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps in protecting the transistor from voltage spikes and reverse current, increasing its reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast switching speeds and efficient power management.

Surface Mount: YES

Surface mount design makes it easy to integrate into circuit boards, saving space and simplifying manufacturing processes.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages without the risk of damage.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and soldering onto circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and better stability during soldering.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control over the transistor's conductivity, enhancing performance.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit design and functionality.

Maximum Power Dissipation (Abs): 0.47 W

With a maximum power dissipation of 0.47W, this transistor can handle power efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and makes it suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high-performance characteristics and reliability.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments.

Transistor Element Material: SILICON

Silicon material offers superior performance and durability compared to other semiconductor materials.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this transistor is suitable for use in extreme cold conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides a reliable and durable connection, while annealing enhances the terminal's mechanical strength.

Maximum Drain Current (ID): 3.6 A

High maximum drain current allows for handling higher power loads and ensures efficient operation.

Maximum Drain-Source On Resistance: 0.024 ohm

Low drain-source on resistance minimizes power losses and ensures efficient power management.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and allows for easy connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR3C21NZT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

ULTRA LOW RESISTANCE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

3.6 A

Maximum Drain-Source On Resistance:

.024 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR3C21NZT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 9