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NTR3A052PZT1G

Onsemi

NTR3A052PZT1G by Onsemi

NTR3A052PZT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.047 ohm RDS(on), and 3.3A ID. Ideal for SWITCHING applications in small outline packages, operating from -55 to 150 °C with ENHANCEMENT MODE technology.

Median Price

$0.227

Lifecycle Status

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20

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 51,544 parts In-Stock

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$0.470

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$0.284

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$0.180

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$0.141

51,544

$0.470

$0.284

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$0.141

Newark

USA . 2,782 parts In-Stock

1+ parts

$0.802

100+ parts

$0.357

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$0.263

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Verical

USA . 18,899 parts In-Stock

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18,899

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Rochester

USA . 18,899 parts In-Stock

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$0.183

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$0.152

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$0.135

18,899

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$0.183

$0.152

$0.135

Farnell

UK . 8,643 parts In-Stock

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$0.227

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$0.177

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8,643

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$0.177

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Element14

Singapore . 8,643 parts In-Stock

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$0.435

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$0.342

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8,643

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$0.342

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EBV Elektronik

Germany . 6,000 parts In-Stock

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Arrow

USA . 3,000 parts In-Stock

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$0.137

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Distributors (In-Stock)

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Digiode

USA . 112 parts In-Stock

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$0.142

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$0.142

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Nova Conductors

Japan . 50 parts In-Stock

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$0.201

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$0.201

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IBS Electronics

USA . 375,000 parts In-Stock

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NAC Semi

USA . 300,000 parts In-Stock

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Chip Stock

USA . 131,100 parts In-Stock

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Atlantic Semiconductor

USA . 90,737 parts In-Stock

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Bristol Electronics

USA . 87,737 parts In-Stock

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Vyrian

USA . 49,268 parts In-Stock

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Sensible Micro Corp

USA . 16,037 parts In-Stock

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Semtec, LLC

USA . 13,109 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,584 parts In-Stock

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Extreme Components

USA . 360 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 189 parts In-Stock

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$0.078

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$0.078

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Ampacity Inc.

Singapore . 49,335 parts In-Stock

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$0.099

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Corphita

USA . 401 parts In-Stock

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$0.135

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$0.135

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Argo Parts USA

USA . 3,065 parts In-Stock

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$0.201

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$0.195

3,065

$0.201

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$0.195

Semicontronic

India . 49,158 parts In-Stock

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$0.216

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$0.211

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$0.210

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Microchip USA

USA . 2,165 parts In-Stock

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$1.044

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Aztec Data Supply Inc.

USA . 3,263 parts In-Stock

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$1.840

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Perfect Parts

USA . 86,296 parts In-Stock

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RC Electronics

USA . 75,217 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

USA . 18,991 parts In-Stock

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Futuretech Components

Singapore . 15,000 parts In-Stock

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Eastek

USA . 9,000 parts In-Stock

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Problanco Electronics

Mexico . 7,163 parts In-Stock

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Glotronic Ltd.

UK . 4,800 parts In-Stock

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TANS Electronics

Latvia . 4,389 parts In-Stock

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SupplyDigital Components

Austria . 3,960 parts In-Stock

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Kulean Microsystems

USA . 2,657 parts In-Stock

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Continental Prestige Electronics

USA . 1,064 parts In-Stock

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$0.252

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$0.161

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$0.141

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Netroflash

USA . 500 parts In-Stock

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$0.197

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$0.191

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$0.187

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Robosynatics

Brazil . 350 parts In-Stock

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Lucentia Tech

USA . 350 parts In-Stock

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UHIMA Technologies

Türkiye . 19 parts In-Stock

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Overview

Enhance your electronic designs with the NTR3A052PZT1G by Onsemi, a top-quality P-CHANNEL field effect transistor that offers exceptional performance in switching applications. With its built-in diode and enhancement mode operation, this small signal FET provides reliable and efficient functionality. Manufactured by Onsemi, a trusted industry leader, this transistor guarantees superior quality and durability. Whether you're working on consumer electronics or industrial automation, this versatile component will deliver the power and efficiency you need. Upgrade your projects today with the NTR3A052PZT1G and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components of the transistor, ensuring durability and reliability in various environments.

Polarity or Channel Type: P-CHANNEL

Suitable for use in applications where P-channel transistors are preferred, offering design flexibility.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode, allowing for simplified circuit design and potentially reducing the need for additional components.

Transistor Application: SWITCHING

Optimized for switching applications where fast switching speeds and low power dissipation are important.

Surface Mount: YES

Suitable for surface mount technology, enabling easy and efficient integration into PCB designs.

Minimum DS Breakdown Voltage: 20 V

Allows for safe operation within specified voltage limits, ensuring reliable performance.

Package Shape: RECTANGULAR

Provides a compact form factor, making it suitable for space-constrained applications.

Terminal Form: GULL WING

Facilitates easy soldering onto PCBs, enhancing assembly efficiency.

Operating Mode: ENHANCEMENT MODE

Offers enhanced control over the transistor's operation, allowing for precise switching characteristics.

Maximum Power Dissipation (Abs): 0.72 W

Capable of dissipating heat effectively, preventing overheating and potential damage to the transistor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology, known for its high switching speeds and low power consumption, making it ideal for switching applications.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for applications where elevated temperatures are expected.

Minimum Operating Temperature: -55 °C

Capable of functioning in cold environments, ensuring versatility in operating conditions.

Maximum Drain Current (ID): 3.3 A

Supports high drain current levels, suitable for applications requiring high power handling capabilities.

Maximum Drain-Source On Resistance: 0.047 ohm

Low on-resistance helps minimize power losses and improve efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and design.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified duration, ensuring reliability during manufacturing processes.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during soldering processes, ensuring proper attachment to PCBs.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR3A052PZT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

3.3 A

Maximum Drain-Source On Resistance:

.047 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR3A052PZT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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