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NTK3134NT1G

Onsemi

NTK3134NT1G by Onsemi

NTK3134NT1G by Onsemi is a small signal FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 0.89A Drain Current, and 0.35ohm Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE at up to 150°C, making it ideal for various electronic circuits.

Median Price

$0.162

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 946 parts In-Stock

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$0.159

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$0.159

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$0.146

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$0.135

946

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$0.159

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$0.135

Mouser Electronics

USA . 8,628 parts In-Stock

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$0.650

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$0.257

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$0.179

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$0.148

8,628

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$0.257

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$0.148

DigiKey

USA . 94 parts In-Stock

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$0.650

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$0.257

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$0.174

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$0.131

94

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Chip1Stop

Japan . 197 parts In-Stock

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$1.050

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$0.224

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Arrow

USA . 76,000 parts In-Stock

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Master Electronics

USA . 40,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 4,000 parts In-Stock

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Verical

USA . 2,799 parts In-Stock

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Rochester

USA . 2,799 parts In-Stock

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$0.148

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$0.123

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$0.110

2,799

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Distributors (In-Stock)

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Digiode

USA . 1,275 parts In-Stock

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$0.115

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Nova Conductors

Japan . 300 parts In-Stock

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TME

Poland . 160 parts In-Stock

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$0.490

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$0.166

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$0.490

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Maritex

Poland . 15,608 parts In-Stock

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$0.599

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$0.143

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$0.099

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$0.077

15,608

$0.599

$0.143

$0.099

$0.077

NAC Semi

USA . 808,000 parts In-Stock

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Chip Stock

USA . 535,420 parts In-Stock

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Bristol Electronics

USA . 496,399 parts In-Stock

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$0.300

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$0.120

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$0.081

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$0.081

Vyrian

USA . 58,815 parts In-Stock

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Sensible Micro Corp

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IBS Electronics

USA . 24,000 parts In-Stock

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Contempo Components LLC

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Cyclops Electronics Ltd

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Dan-Mar Components

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Semtec, LLC

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Prism Electronics

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Lantek

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Semicontronic

India . 62,349 parts In-Stock

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Ampacity Inc.

Singapore . 63,334 parts In-Stock

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Corohmni

South Africa . 413 parts In-Stock

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Corphita

USA . 2,280 parts In-Stock

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Argo Parts USA

USA . 2,338 parts In-Stock

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Continental Prestige Electronics

USA . 547 parts In-Stock

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$0.167

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547

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Netroflash

USA . 1,000 parts In-Stock

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$0.174

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Aztec Data Supply Inc.

USA . 4,937 parts In-Stock

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$0.660

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.898

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$0.898

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Perfect Parts

USA . 364,953 parts In-Stock

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RC Electronics

USA . 66,305 parts In-Stock

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XScomponents

USA . 57,111 parts In-Stock

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Formix International (Excess)

India . 13,522 parts In-Stock

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Infinite Electronics LLP (Excess)

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Problanco Electronics

Mexico . 8,273 parts In-Stock

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ChipstoGo Electronic ltd

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Lixinc

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TANS Electronics

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Kepictronics

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A-Z Elektronik GmbH

Germany . 2,861 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,760 parts In-Stock

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 336 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

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Overview

Make your electronics projects a breeze with the NTK3134NT1G by Onsemi. Crafted with precision and expertise, this small signal field effect transistor offers unparalleled quality and reliability for all your switching needs. Its N-channel configuration, built-in diode, and resistor make it a versatile choice for a variety of applications. With a maximum drain current of 0.89 A and a low drain-source on resistance of 0.35 ohm, this transistor delivers exceptional performance and efficiency. Trust Onsemi to provide you with the tools you need to bring your projects to life with ease and confidence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel type allows for efficient electron flow, resulting in low ON-state resistance and high switching speeds.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design, reducing the need for external components and saving space.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast turn-on and turn-off times, increasing efficiency.

Surface Mount: YES

The surface mount feature allows for easy and space-saving PCB assembly, making it suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages safely and reliably.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and handling, making it convenient for manufacturing processes.

Terminal Form: FLAT

The flat terminal form ensures secure connections and reliable performance in various electronic circuits.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for precise control over the transistor's ON/OFF states, enhancing overall circuit performance.

Maximum Drain Current (Abs) (ID): 0.89 A

The high maximum drain current capability of 0.89A ensures reliable operation in applications requiring high current handling capabilities.

No. of Terminals: 3

With three terminals, this transistor offers easy integration into circuits with straightforward connections.

Maximum Power Dissipation (Abs): 0.55 W

The maximum power dissipation of 0.55W ensures the transistor can handle heat dissipation effectively, improving overall reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The use of metal-oxide semiconductor technology provides high switching speeds and low power consumption, making it energy-efficient.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments without compromising performance.

Transistor Element Material: SILICON

The use of silicon material ensures high reliability and consistent performance over a wide range of operating conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability in various application environments.

Maximum Drain-Source On Resistance: 0.35 ohm

The low drain-source on resistance of 0.35 ohms minimizes power loss and heat generation, improving overall efficiency.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit layout and offers multiple options for connection configurations.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds at peak temperature, this transistor is easy to integrate into automated manufacturing processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable solder joint formation during the assembly process, guaranteeing long-term performance.

Maximum Feedback Capacitance (Crss): 15 pF

The low feedback capacitance of 15pF minimizes parasitic capacitance effects, allowing for stable and high-speed operation in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTK3134NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.89 A

Maximum Drain Current (ID):

.89 A

Maximum Drain-Source On Resistance:

.35 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTK3134NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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