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NTK3134NT1H

Onsemi

NTK3134NT1H by Onsemi

NTK3134NT1H by Onsemi is a small signal FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 0.89A Drain Current, and 0.35 ohm Drain-Source Resistance. With a max operating temperature of 150 °C, this transistor is ideal for high-performance electronic devices requiring efficient power management.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 21,730 parts In-Stock

1+ parts

-

100+ parts

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$0.090

21,730

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$0.090

Flip Electronics (Authorized)

USA . 21,730 parts In-Stock

1+ parts

-

100+ parts

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21,730

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-

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Rochester

USA . 19,392 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

19,392

-

$0.092

$0.077

$0.068

Verical

USA . 19,277 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.086

19,277

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-

-

$0.086

Distributors (In-Stock)

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Vyrian

USA . 2,148 parts In-Stock

1+ parts

$0.064

100+ parts

-

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2,148

$0.064

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Digiode

USA . 1,209 parts In-Stock

1+ parts

$0.072

100+ parts

-

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1,209

$0.072

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DigiKey Marketplace

USA . 160,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.080

10k+ parts

-

160,000

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-

$0.080

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Flip Electronics

USA . 21,730 parts In-Stock

1+ parts

-

100+ parts

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21,730

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SPM Sales

USA . 940 parts In-Stock

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940

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Distributors (Availability)

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Corohmni

South Africa . 59 parts In-Stock

1+ parts

$0.064

100+ parts

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59

$0.064

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Corphita

USA . 226 parts In-Stock

1+ parts

$0.068

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226

$0.068

-

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Continental Prestige Electronics

USA . 191,114 parts In-Stock

1+ parts

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100+ parts

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$0.091

10k+ parts

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191,114

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$0.091

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RC Electronics

USA . 127,523 parts In-Stock

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127,523

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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90,000

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TANS Electronics

Latvia . 5,738 parts In-Stock

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5,738

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Kepictronics

USA . 5,588 parts In-Stock

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5,588

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Problanco Electronics

Mexico . 3,470 parts In-Stock

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3,470

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Perfect Parts

USA . 3,024 parts In-Stock

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3,024

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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2,400

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SupplyDigital Components

Austria . 1,392 parts In-Stock

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1,392

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Kulean Microsystems

USA . 1,362 parts In-Stock

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1,362

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Futuretech Components

Singapore . 508 parts In-Stock

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508

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UHIMA Technologies

Türkiye . 8 parts In-Stock

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8

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Overview

Looking for a reliable small signal field effect transistor? Look no further than the NTK3134NT1H by Onsemi! With its high-quality construction and N-channel configuration, this transistor is perfect for switching applications. Its built-in diode and resistor make installation a breeze, while its low power dissipation ensures efficiency. Whether you're a hobbyist or a professional, this transistor offers exceptional value and performance. Upgrade your projects with the NTK3134NT1H today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have better performance characteristics compared to P-channel FETs, making this product a good choice for applications requiring high efficiency.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and save space on the PCB, making this product a cost-effective solution.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast and efficient response times for optimal performance.

Surface Mount: YES

Surface mount technology allows for easy and efficient integration into compact electronic devices, making this product suitable for space-constrained applications.

Maximum DS Breakdown Voltage: 20 V

With a high breakdown voltage, this FET can handle higher voltages safely, providing increased reliability in demanding operating conditions.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and soldering on the PCB, ensuring a secure connection and reliable performance.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stable and reliable performance, making this product a dependable choice for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without compromising performance, ensuring long-term durability.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTK3134NT1H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.89 A

Maximum Drain Current (ID):

.75 A

Maximum Drain-Source On Resistance:

.35 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTK3134NT1H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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