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NTK3134NT5H

Onsemi

NTK3134NT5H by Onsemi

NTK3134NT5H by Onsemi is a N-CHANNEL FET with built-in diode and resistor, ideal for SWITCHING applications. It features a 20V DS Breakdown Voltage, 0.89A Drain Current, and 0.35ohm On Resistance. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for various electronic devices.

Median Price

$0.080

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 32,000 parts In-Stock

1+ parts

$0.080

100+ parts

$0.075

1k+ parts

$0.068

10k+ parts

-

32,000

$0.080

$0.075

$0.068

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DigiKey

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.080

32,000

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-

-

$0.080

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,884 parts In-Stock

1+ parts

$0.076

100+ parts

-

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1,884

$0.076

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Vyrian

USA . 2,017 parts In-Stock

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$0.080

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2,017

$0.080

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 31,554 parts In-Stock

1+ parts

$0.068

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-

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31,554

$0.068

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Corphita

USA . 1,090 parts In-Stock

1+ parts

$0.072

100+ parts

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1,090

$0.072

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Component Stockers USA

USA . 46,968 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

46,968

$0.080

$0.070

$0.070

$0.070

Corohmni

South Africa . 435 parts In-Stock

1+ parts

$0.080

100+ parts

-

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435

$0.080

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Continental Prestige Electronics

USA . 32,000 parts In-Stock

1+ parts

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100+ parts

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$0.070

10k+ parts

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32,000

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$0.070

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QUARKTWIN TECHNOLOGY LTD

USA . 9,283 parts In-Stock

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9,283

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TANS Electronics

Latvia . 7,581 parts In-Stock

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7,581

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A-Z Elektronik GmbH

Germany . 7,236 parts In-Stock

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SupplyDigital Components

Austria . 5,198 parts In-Stock

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Problanco Electronics

Mexico . 4,776 parts In-Stock

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Kulean Microsystems

USA . 4,491 parts In-Stock

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Metaverse IC Inc.

Canada . 1,811 parts In-Stock

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1,811

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UHIMA Technologies

Türkiye . 691 parts In-Stock

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691

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Futuretech Components

Singapore . 508 parts In-Stock

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508

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Overview

Discover the NTK3134NT5H by Onsemi, a high-quality Small Signal Field Effect Transistor designed for switching applications. With a built-in diode and resistor, this N-CHANNEL transistor offers enhanced performance and reliability. Ideal for surface mount configurations, this transistor boasts a maximum drain current of 0.89 A and a low on-resistance of 0.35 ohm. Trust in Onsemi's renowned expertise in semiconductor technology to deliver a product that exceeds expectations. Upgrade your electronic projects with the value and benefits of the NTK3134NT5H.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable for a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility and lower resistance, leading to better performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and save space on the PCB, making the product more efficient and cost-effective.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can handle high-frequency switching with minimal power loss.

Surface Mount: YES

Being surface mountable makes it easy to integrate into compact electronic devices and allows for automated assembly processes.

Maximum Drain Current (Abs) (ID): 0.89 A

With a high maximum drain current, this FET can handle a wide range of electrical loads and is suitable for various applications.

Maximum Power Dissipation (Abs): 0.55 W

The low power dissipation helps in minimizing heat generation and energy loss, improving the overall efficiency of the circuit.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, this FET is suitable for industrial and automotive applications where temperature fluctuations are common.

Maximum Feedback Capacitance (Crss): 15 pF

Having low feedback capacitance ensures stable operation and minimizes the risk of oscillations in high-frequency circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTK3134NT5H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.89 A

Maximum Drain Current (ID):

.75 A

Maximum Drain-Source On Resistance:

.35 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTK3134NT5H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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