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NTK3043NT5G

Onsemi

NTK3043NT5G by Onsemi

NTK3043NT5G by Onsemi is a small signal FET with N-channel polarity, suitable for switching applications. It features a min DS breakdown voltage of 20V, max drain current of 0.255A, and max power dissipation of 0.545W. This MOSFET operates in enhancement mode with a max temperature rating of 150°C, making it ideal for various electronic circuits requiring efficient power management in compact designs.

Median Price

$0.260

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 21,460 parts In-Stock

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$0.260

100+ parts

$0.100

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$0.058

10k+ parts

$0.041

21,460

$0.260

$0.100

$0.058

$0.041

Avnet

USA . 8,000 parts In-Stock

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8,000

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Digiode

USA . 2,360 parts In-Stock

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$0.218

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2,360

$0.218

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Vyrian

USA . 1,283 parts In-Stock

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$0.230

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1,283

$0.230

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Flip Electronics

USA . 48,000 parts In-Stock

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48,000

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Sensible Micro Corp

USA . 24,000 parts In-Stock

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R&J Components

USA . 7,372 parts In-Stock

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7,372

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Distributors (Availability)

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Corohmni

South Africa . 91 parts In-Stock

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$0.170

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91

$0.170

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Corphita

USA . 1,880 parts In-Stock

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$0.207

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1,880

$0.207

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Advanced Electronics

New Zealand . 63 parts In-Stock

1+ parts

$0.747

100+ parts

$0.680

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$0.613

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63

$0.747

$0.680

$0.613

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Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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Kepictronics

USA . 39,885 parts In-Stock

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Kulean Microsystems

USA . 7,332 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,765 parts In-Stock

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SupplyDigital Components

Austria . 5,235 parts In-Stock

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Problanco Electronics

Mexico . 4,207 parts In-Stock

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TANS Electronics

Latvia . 938 parts In-Stock

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UHIMA Technologies

Türkiye . 576 parts In-Stock

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576

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Overview

Unleash the power of innovation with the NTK3043NT5G by Onsemi. This small signal field effect transistor offers unparalleled quality and reliability, thanks to Onsemi's reputation for excellence in manufacturing. Ideal for switching applications, this N-channel transistor comes with a built-in diode and resistor, making it a versatile solution for a variety of projects. With a maximum drain current of 0.255 A and a minimum DS breakdown voltage of 20 V, this transistor delivers exceptional performance under any conditions. Upgrade your electronic designs today with the NTK3043NT5G and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components of the transistor, ensuring longevity and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and faster switching speeds compared to P-channel FETs, making them ideal for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce the need for additional components, saving space and cost.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in such scenarios.

Surface Mount: YES

Suitable for automated assembly processes, making it easier to integrate into electronic devices.

Minimum DS Breakdown Voltage: 20 V

Can withstand higher voltages, providing a safety margin in high-voltage circuit applications.

Maximum Drain Current (Abs) (ID): 0.255 A

Capable of handling relatively high current levels, making it suitable for medium-power applications.

Maximum Power Dissipation (Abs): 0.545 W

Can dissipate heat effectively, ensuring stable operation under varying load conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability, commonly used in modern electronic devices.

Maximum Operating Temperature: 150 °C

Operates reliably at high temperatures, suitable for industrial and automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTK3043NT5G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.255 A

Maximum Drain Current (ID):

.21 A

Maximum Drain-Source On Resistance:

3.8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTK3043NT5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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