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NTK3142PT1G

Onsemi

NTK3142PT1G by Onsemi

NTK3142PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.215A Drain Current, and 4 ohm On Resistance. Ideal for SWITCHING applications, it features a built-in diode and resistor in a small outline package suitable for surface mount technology. Operating at up to 150 °C, this FET is designed for high-performance enhancement mode switching circuits.

Median Price

$0.104

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 20,206 parts In-Stock

1+ parts

-

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$0.100

20,206

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$0.100

Verical

USA . 19,696 parts In-Stock

1+ parts

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$0.104

19,696

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-

$0.104

Rochester

USA . 40 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

40

-

$0.119

$0.099

$0.088

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 951 parts In-Stock

1+ parts

$0.093

100+ parts

-

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951

$0.093

-

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Vyrian

USA . 1,557 parts In-Stock

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$0.098

100+ parts

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1,557

$0.098

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Legend Electronics Inc.

USA . 6,500 parts In-Stock

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6,500

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J2 Sourcing AB

Sweden . 3,000 parts In-Stock

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3,000

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Contempo Components LLC

USA . 2,275 parts In-Stock

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2,275

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SPM Sales

USA . 890 parts In-Stock

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890

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Prism Electronics

USA . 600 parts In-Stock

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600

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Distributors (Availability)

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Corphita

USA . 1,682 parts In-Stock

1+ parts

$0.088

100+ parts

-

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1,682

$0.088

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Corohmni

South Africa . 195 parts In-Stock

1+ parts

$0.098

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195

$0.098

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Component Stockers USA

USA . 17,538 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

17,538

$0.100

$0.090

$0.080

$0.080

Continental Prestige Electronics

USA . 20,206 parts In-Stock

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$0.089

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20,206

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$0.089

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Kepictronics

USA . 14,000 parts In-Stock

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14,000

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Kulean Microsystems

USA . 6,690 parts In-Stock

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6,690

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A-Z Elektronik GmbH

Germany . 6,587 parts In-Stock

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6,587

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SupplyDigital Components

Austria . 5,243 parts In-Stock

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Assy Fe

Spain . 1,450 parts In-Stock

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Problanco Electronics

Mexico . 883 parts In-Stock

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883

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Perfect Parts

USA . 741 parts In-Stock

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741

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TANS Electronics

Latvia . 670 parts In-Stock

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670

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UHIMA Technologies

Türkiye . 318 parts In-Stock

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318

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Overview

Enhance your electronic devices with the NTK3142PT1G by Onsemi, a top-quality P-Channel Small Signal Field Effect Transistor. Manufactured by Onsemi, known for their innovative technology and reliability, this transistor is perfect for switching applications. With a built-in diode and resistor, this product offers convenience and efficiency. Experience the benefits of enhanced performance, increased power dissipation, and minimal drain-source resistance. Upgrade your devices with this cutting-edge technology and take your projects to the next level with Onsemi's NTK3142PT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it long-lasting.

Polarity or Channel Type: P-CHANNEL

P-channel transistors can handle higher voltages and provide better efficiency in certain circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor offer added functionality and convenience in circuit designs, reducing the need for additional components.

Transistor Application: SWITCHING

This transistor is optimized for switching applications, making it suitable for a wide range of electronic devices.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and space in the design.

Minimum DS Breakdown Voltage: 20 V

The high breakdown voltage ensures the transistor can handle higher voltages without damage, adding to its reliability.

Maximum Drain Current (Abs) (ID): 0.215 A

With a maximum drain current of 0.215 A, this transistor can handle moderate power requirements in various applications.

Maximum Power Dissipation (Abs): 0.5 W

The high power dissipation rating ensures the transistor can handle heat dissipation effectively to prevent overheating.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures in demanding environments.

Maximum Drain-Source On Resistance: 4 ohm

The low drain-source on resistance of 4 ohms minimizes power loss and improves efficiency in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTK3142PT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.215 A

Maximum Drain Current (ID):

.215 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTK3142PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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