Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NTD60N03-1 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 28V DS Breakdown Voltage, 120A IDM, and 0.0075 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has an EAS of 733mJ.
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UHIMA Technologies
Provides durability and protection for the internal components, ensuring a longer lifespan for the product.
N-channel FETs typically have lower on-resistance and higher efficiency compared to P-channel FETs, making them ideal for switching applications.
Designed specifically for switching applications, ensuring reliable performance in various electronic systems.
Can handle higher voltage levels without breakdown, making it suitable for applications where voltage spikes may occur.
Capable of handling high current spikes during operation, making it suitable for demanding applications.
Can dissipate heat effectively, ensuring the transistor stays within safe operating temperatures during use.
Can operate in high-temperature environments without performance degradation, providing flexibility in system design.
Power Field Effect Transistors (FET) NTD60N03-1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
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Maximum Drain Current (Abs) (ID):
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JESD-609 Code:
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Maximum Operating Temperature:
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Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
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NTD60N03-1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LM317T
Analog Devices
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;
1N4148
Central Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
ULN2803A
Motorola
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
LL4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
M24308/2-1F
Itt Cannon
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;
BAT54SLT1G
Onsemi
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
ESD5Z5.0T1G
ESD5Z5.0T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V reverse test voltage and 174W peak power dissipation. It is used for transient suppression in electronic circuits, meeting IEC-61000-4-2, 4-4 standards and UL recognized for reliability.
Eic Semiconductor
ULN2803ADWR
Texas Instruments
ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.
LM7805CT/NOPB
LM7805CT/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a package style of flange mount, and offers low line/load regulation making it ideal for various electronic applications requiring stable power supply.
FDV303N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
4554
Jw Miller Magnetics
Other Semiconductors;
Excel (Suzhou) Semiconductor
Transys Electronics
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
Goodwork Semiconductor
IRF640
Vishay Intertechnology
Vishay Intertechnology's IRF640 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 125W and operates in ENHANCEMENT MODE. Suitable for various electronic devices requiring high current switching capabilities.
STP80NF10
STP80NF10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 350mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 300W and operating temperature up to 175°C, it's suitable for high-power circuits.
IRF7507TRPBF
Infineon Technologies
IRF7507TRPBF by Infineon Technologies is a Power FET with N-CHANNEL and P-CHANNEL configuration. It has a max drain current of 2.4A, on-resistance of 0.14 ohm, and operates in enhancement mode for switching applications. This transistor is designed for surface mount with a package style of small outline, making it suitable for various electronic devices requiring efficient power management.
NDT3055
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain-Source On Resistance: .1 ohm; Package Body Material: PLASTIC/EPOXY;
RFD16N05LSM9A
RFD16N05LSM9A by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, 16A max drain current, and 0.056 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with 45A pulsed drain current capability.
SI7149ADP-T1-GE3
SI7149ADP-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, 300A IDM, and 0.0052 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is SMALL OUTLINE with DUAL terminals and DRAIN case connection.
IRF9530NSTRLPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-G2;
IRFP460BPBF
Vishay Intertechnology's IRFP460BPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 62A IDM and 0.25 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with an EAS of 281mJ, making it suitable for high-power tasks.
IRFP460
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .27 ohm; JEDEC-95 Code: TO-247;
IRF9540NPBF
IRF9540NPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 76A Max Pulsed Drain Current, 430mJ Avalanche Energy Rating, and 0.117 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 175°C, making it suitable for high-power circuits.
IRFR5305TRPBF
IRFR5305TRPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 175 °C. The PLASTIC/EPOXY package with GULL WING terminals offers high power dissipation of 110W in a small outline style.
NVTFS5116PLTAG
NVTFS5116PLTAG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 126A IDM, and 0.072ohm RDS(on). Ideal for power management applications in small outline packages. Operating at up to 175°C, it features a built-in diode and avalanche energy rating of 45mJ.
FDB33N25TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 235 W; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 918 mJ;
SI7611DN-T1-GE3
Vishay Intertechnology's SI7611DN-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 40V DS breakdown voltage, 20A pulsed drain current, and 0.025 ohm max drain-source resistance. Ideal for high-power applications requiring efficient switching with a max power dissipation of 39W in a small outline package.
FDMS86163P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 100 V;
FDS4559
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .055 ohm;
CSD18563Q5A
CSD18563Q5A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 96A IDM, and 0.0108 ohm RDS(on). With a max power dissipation of 116W, it operates in temperatures ranging from -55 to 150 °C.
FQD7P20TM
FQD7P20TM by Onsemi is a P-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 22.8A and EAS of 570mJ, operating in ENHANCEMENT MODE at up to 150°C.
SPW47N60C3
SPW47N60C3 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a Max Drain Current of 47A and 0.07 ohm On Resistance, suitable for high-power applications. Ideal for use in power supplies, motor control, and industrial equipment due to its high current handling capabilities.
IRF540STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
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NTD6414ANT4G
NTD6414ANT4G by Onsemi is an N-CHANNEL FET with 100V DS Breakdown Voltage, 117A IDM, and 0.037 ohm RDS(on). It is used in power applications requiring high drain current handling and low on-resistance.
NTD6415ANLT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;
NTD6416ANLT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Package Shape: RECTANGULAR; Maximum Drain Current (Abs) (ID): 19 A;
NTD6416ANT4G
NTD6416ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 62A IDM, and 0.081 ohm RDS(on). It's an N-CHANNEL transistor in PLASTIC/EPOXY package ideal for power applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 71W at 175°C.
NTD60N02R-35G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 25 V; No. of Terminals: 3;
NTD6414AN-1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
NTD6415AN-1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 79 mJ;
NTD6415ANT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Maximum Pulsed Drain Current (IDM): 89 A; Terminal Finish: TIN;
NTD60N02R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 32 A;
NTD60N02R-032G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NTD60N02RT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; No. of Terminals: 2; Package Style (Meter): SMALL OUTLINE;
NTD60N02R-35
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain Current (ID): 32 A; JESD-30 Code: R-PSIP-T3;
NTD60N02RT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Terminal Position: SINGLE; Maximum Drain Current (ID): 32 A;
NTD60N02R-032
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 32 A; Avalanche Energy Rating (EAS): 60 mJ; Terminal Position: SINGLE;
NTD60N02R-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Package Style (Meter): IN-LINE; Maximum Drain Current (Abs) (ID): 32 A;
NTD60N03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; JESD-609 Code: e0; Qualification: Not Qualified;
NTD60N02RG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Peak Reflow Temperature (C): 260; JESD-30 Code: R-PSSO-G2;
NTD600N80S3Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Pulsed Drain Current (IDM): 21 A; Terminal Finish: MATTE TIN;
NTD60N02R-001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-609 Code: e0; Terminal Position: SINGLE;
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