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NLV27WZ02USG

Onsemi

NLV27WZ02USG by Onsemi

NLV27WZ02USG by Onsemi is a CMOS Logic Gate with 2 functions, 2 inputs, and 5.2 ns propagation delay at 3.3V. Ideal for military applications due to AEC-Q100 screening level, -55 to 125 °C operating temp range, and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,485 parts In-Stock

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Digiode

USA . 1,479 parts In-Stock

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Problanco Electronics

Mexico . 8,386 parts In-Stock

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TANS Electronics

Latvia . 5,175 parts In-Stock

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Corphita

USA . 2,297 parts In-Stock

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Kulean Microsystems

USA . 1,722 parts In-Stock

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SupplyDigital Components

Austria . 633 parts In-Stock

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UHIMA Technologies

Türkiye . 632 parts In-Stock

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Corohmni

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Overview

Discover the perfect balance of performance and reliability with the NLV27WZ02USG logic gates by Onsemi. Designed with precision and quality in mind, these logic gates offer a seamless integration into various applications. Whether you're working on automotive electronics or industrial control systems, this product delivers exceptional value, efficiency, and peace of mind. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the NLV27WZ02USG logic gates today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Propagation Delay At Nominal Supply: 5.2 ns

Low propagation delay ensures fast signal processing and response times.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a commonly used supply voltage of 3.3V, compatible with many systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for use in industrial or harsh environments.

Minimum Operating Temperature: -55 °C

Can operate in very low temperatures, offering versatility in different operating conditions.

Technology: CMOS

Utilizes CMOS technology known for low power consumption and high noise immunity, making it energy-efficient and reliable.

Technical Specifications

Logic Gates NLV27WZ02USG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G8

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.2 ns

Propagation Delay (tpd):

9.7 ns

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Trade Compliance

NLV27WZ02USG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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