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NLU1G86AMUTCG

Onsemi

NLU1G86AMUTCG by Onsemi

NLU1G86AMUTCG by Onsemi is a CMOS Logic Gate with 2 inputs, 19.5 ns propagation delay, and 50 pF load capacitance. Ideal for military applications due to its small outline package style and wide operating temperature range from -55 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 13,301 parts In-Stock

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Digiode

USA . 2,211 parts In-Stock

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AZTECH Wire

Italy . 632 parts In-Stock

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$19.320

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Component Stockers USA

USA . 772 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 8,014 parts In-Stock

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SupplyDigital Components

Austria . 5,347 parts In-Stock

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Problanco Electronics

Mexico . 2,155 parts In-Stock

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Kulean Microsystems

USA . 1,760 parts In-Stock

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UHIMA Technologies

Türkiye . 962 parts In-Stock

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Corphita

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Microchip USA

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Corohmni

South Africa . 222 parts In-Stock

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Overview

Elevate your projects with the NLU1G86AMUTCG by Onsemi - a top-quality logic gate that delivers precision performance and reliability. Manufactured by industry leader Onsemi, this cutting-edge component is designed for seamless integration in a variety of applications. With fast propagation delay, low power consumption, and versatile terminal options, this product offers unmatched value and efficiency to customers. Say goodbye to compromise and hello to superior results with the NLU1G86AMUTCG by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body helps in providing durability and protection to the internal components of the logic gate.

Propagation Delay At Nominal Supply: 19.5 ns

The low propagation delay ensures quick processing of signals, making this logic gate suitable for applications requiring high-speed operations.

Surface Mount: YES

Being surface mountable allows for easy and convenient integration onto circuit boards, saving space and making assembly simpler.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard voltage levels in electronic circuits.

Technology: CMOS

Utilizing CMOS technology helps in reducing power consumption and providing improved noise immunity, making this logic gate efficient and reliable.

Technical Specifications

Logic Gates NLU1G86AMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

19.5 ns

Propagation Delay (tpd):

19.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLU1G86AMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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