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NL27WZ14DTT1

Onsemi

NL27WZ14DTT1 by Onsemi

NL27WZ14DTT1 by Onsemi is a CMOS Logic Gates with 2 functions, Vsup range of 2.3V to 5.5V, and 9.1ns propagation delay. Ideal for military-grade applications due to its Schmitt Trigger feature and operating temperature range of -55 °C to 125°C. Package style is small outline, thin profile, shrink pitch for compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip Stock

USA . 321,600 parts In-Stock

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Sea View Technologies

USA . 4,862 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 3,523 parts In-Stock

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Digiode

USA . 2,442 parts In-Stock

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Atlantic Semiconductor

USA . 1,092 parts In-Stock

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EMSNET

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AZTECH Wire

Italy . 969 parts In-Stock

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$20.390

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Component Stockers USA

USA . 509 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 8,300 parts In-Stock

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SupplyDigital Components

Austria . 5,277 parts In-Stock

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TANS Electronics

Latvia . 5,198 parts In-Stock

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Problanco Electronics

Mexico . 1,691 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 807 parts In-Stock

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Vigor

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Microchip USA

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Corohmni

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Overview

Experience the precision and reliability of Onsemi with the NL27WZ14DTT1 Logic Gates. Designed to meet the highest standards, this product offers a wide range of applications that require superior performance. With advanced technology and innovative features, this Logic Gate provides value and benefits that cater to the needs of customers looking for quality components. Trust in Onsemi for your next project and elevate your designs with the NL27WZ14DTT1 Logic Gates.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the product easy to handle and affordable for mass production.

Surface Mount: YES

Surface mount components are easier to assemble and allow for smaller and more compact designs, saving space in electronic circuits.

No. of Functions: 2

Having multiple functions in one component reduces the need for additional components, simplifying circuit design and reducing overall costs.

Nominal Supply Voltage / Vsup (V): 2.5

The low supply voltage requirement makes this product suitable for low-power applications, increasing energy efficiency.

Maximum I (ol): 24 Amp

The high output current capability allows for driving a wide range of loads, making this product versatile and suitable for various applications.

Propagation Delay (tpd): 9.1 ns

The short propagation delay ensures fast signal processing and high-speed operation, making this product ideal for time-critical applications.

Minimum Operating Temperature: -55 °C

The wide operating temperature range allows this product to function reliably in extreme environments, making it suitable for industrial and military applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates NL27WZ14DTT1 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

27WZ

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Length:

3 mm

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

235

Power Supplies (V):

3.3

Propagation Delay (tpd):

9.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.5 mm

Trade Compliance

NL27WZ14DTT1 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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