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NL27WZ14DBVT1G

Onsemi

NL27WZ14DBVT1G by Onsemi

NL27WZ14DBVT1G by Onsemi is a Logic Gates IC with 9.1ns Propagation Delay, 2 functions, and 50pF Load Capacitance. Ideal for military applications due to its CMOS technology, -55 to 125 °C operating temperature range, and Schmitt Trigger feature for noise immunity. The small outline package with dual terminals makes it suitable for space-constrained designs.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 396 parts In-Stock

1+ parts

$0.110

100+ parts

$0.055

1k+ parts

$0.045

10k+ parts

$0.039

396

$0.110

$0.055

$0.045

$0.039

Mouser Electronics

USA . 519 parts In-Stock

1+ parts

$0.160

100+ parts

$0.071

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$0.050

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$0.044

519

$0.160

$0.071

$0.050

$0.044

Avnet

USA . 30,000 parts In-Stock

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Arrow

USA . 27,000 parts In-Stock

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$0.037

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$0.037

Distributors (In-Stock)

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Digiode

USA . 493 parts In-Stock

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$0.352

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Flip Electronics

USA . 120,000 parts In-Stock

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NAC Semi

USA . 15,000 parts In-Stock

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Vyrian

USA . 8,151 parts In-Stock

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Ampacity Inc.

Singapore . 15,176 parts In-Stock

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$0.031

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15,176

$0.031

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Corphita

USA . 1,339 parts In-Stock

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$0.333

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1,339

$0.333

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Corohmni

South Africa . 348 parts In-Stock

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$0.370

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348

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SupplyDigital Components

Austria . 8,299 parts In-Stock

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TANS Electronics

Latvia . 8,142 parts In-Stock

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Problanco Electronics

Mexico . 7,039 parts In-Stock

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Kulean Microsystems

USA . 5,119 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,248 parts In-Stock

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Vigor

Singapore . 421 parts In-Stock

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UHIMA Technologies

Türkiye . 252 parts In-Stock

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Microchip USA

USA . 128 parts In-Stock

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Overview

Discover the cutting-edge NL27WZ14DBVT1G Logic Gates by Onsemi, setting new standards in performance and reliability. With a compact design and fast propagation delay, this product is ideal for a wide range of applications. From industrial automation to consumer electronics, this Logic Gate offers unmatched precision and efficiency. Trust Onsemi's reputation for quality and innovation, and experience the value and benefits that the NL27WZ14DBVT1G brings to your projects. Elevate your designs with this powerful component today.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 9.1 ns

Low propagation delay ensures fast response time and efficient operation.

Surface Mount: YES

Surface mount design allows for easy and compact integration onto circuit boards.

Load Capacitance (CL): 50 pF

Suitable load capacitance ensures stable performance in various applications.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes it suitable for use in diverse environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Logic Gates NL27WZ14DBVT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-XDSO-G6

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay At Nominal Supply:

9.1 ns

Propagation Delay (tpd):

15.5 ns

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.5 mm

Trade Compliance

NL27WZ14DBVT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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