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NL27WZ08MU3TCG

Onsemi

NL27WZ08MU3TCG by Onsemi

NL27WZ08MU3TCG by Onsemi is a logic gate with 2 functions and inputs, operating at 2.3V nominal voltage. With a propagation delay of 11ns, it is ideal for military-grade applications requiring fast response times in a small outline package. The device can handle up to 32A output current and operates within a wide temperature range from -55 °C to 125°C.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,971 parts In-Stock

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Digiode

USA . 1,642 parts In-Stock

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AZTECH Wire

Italy . 269 parts In-Stock

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$20.820

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TANS Electronics

Latvia . 4,174 parts In-Stock

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SupplyDigital Components

Austria . 2,554 parts In-Stock

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Corphita

USA . 1,400 parts In-Stock

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Problanco Electronics

Mexico . 1,360 parts In-Stock

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Corohmni

South Africa . 494 parts In-Stock

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Kulean Microsystems

USA . 476 parts In-Stock

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UHIMA Technologies

Türkiye . 246 parts In-Stock

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Microchip USA

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Overview

Discover the powerful NL27WZ08MU3TCG by Onsemi, a top-tier manufacturer known for their high-quality logic gates. This versatile product is perfect for various applications, offering customers unrivaled reliability and performance. With its compact design and advanced technology, this logic gate provides value and benefits that exceed expectations. Upgrade your projects with the NL27WZ08MU3TCG and experience the advantages it brings to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package durable and resistant to damage, ensuring the reliability of the product.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

No. of Functions: 2

Having 2 functions in one device increases efficiency and reduces the need for additional components in the circuit design.

Nominal Supply Voltage / Vsup (V): 2.3

Operating at a nominal supply voltage of 2.3V makes this product suitable for low power consumption applications.

Propagation Delay (tpd): 11 ns

Low propagation delay of 11ns ensures fast operation and response times in the circuit.

Technical Specifications

Logic Gates NL27WZ08MU3TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-N8

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay (tpd):

11 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1 mm

Trade Compliance

NL27WZ08MU3TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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