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NL27WZ07MU1TCG

Onsemi

NL27WZ07MU1TCG by Onsemi

NL27WZ07MU1TCG by Onsemi is a Logic Gates IC with 2 functions, 4.8ns propagation delay, and 50pF load capacitance. Ideal for military applications due to its CMOS technology, -55 to 125 °C operating temperature range, and small outline package style.

Median Price

$0.230

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,565 parts In-Stock

1+ parts

$0.230

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.084

3,565

$0.230

$0.119

$0.099

$0.084

DigiKey

USA . 2,935 parts In-Stock

1+ parts

$0.230

100+ parts

$0.118

1k+ parts

$0.098

10k+ parts

$0.088

2,935

$0.230

$0.118

$0.098

$0.088

Flip Electronics (Authorized)

USA . 150,000 parts In-Stock

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Avnet

USA . 3,000 parts In-Stock

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3,000

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Verical

USA . 3,000 parts In-Stock

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$0.086

3,000

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$0.086

Distributors (In-Stock)

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Flip Electronics

USA . 47,388 parts In-Stock

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Vyrian

USA . 5,011 parts In-Stock

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NAC Semi

USA . 3,000 parts In-Stock

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$0.137

3,000

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$0.137

Digiode

USA . 630 parts In-Stock

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630

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Distributors (Availability)

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AZTECH Wire

Italy . 1,220 parts In-Stock

1+ parts

$9.410

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$9.410

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Problanco Electronics

Mexico . 8,345 parts In-Stock

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SupplyDigital Components

Austria . 2,556 parts In-Stock

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Kulean Microsystems

USA . 1,845 parts In-Stock

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Microchip USA

USA . 1,594 parts In-Stock

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TANS Electronics

Latvia . 958 parts In-Stock

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UHIMA Technologies

Türkiye . 944 parts In-Stock

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Corphita

USA . 604 parts In-Stock

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Corohmni

South Africa . 274 parts In-Stock

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Overview

Discover the NL27WZ07MU1TCG by Onsemi, a high-quality Logic Gates product that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. With a fast propagation delay and open-drain output characteristics, this Logic Gates product provides customers with unmatched value and benefits. Enhance your projects with the NL27WZ07MU1TCG and experience the advantages of its advanced technology and superior design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for portable or rough environment applications.

Propagation Delay At Nominal Supply: 4.8 ns

The low propagation delay ensures fast response time in signal processing, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Being surface mountable simplifies the assembly process and allows for higher component density on PCBs, saving space and reducing production costs.

Nominal Supply Voltage / Vsup (V): 2.3

The low nominal supply voltage saves power and makes this logic gate suitable for battery-operated devices or low-power applications.

Output Characteristics: OPEN-DRAIN

The open-drain output allows for easy interfacing with other components and provides flexibility in circuit design.

Temperature Grade: MILITARY

The military-grade temperature rating ensures reliability and performance in harsh environmental conditions, making this logic gate suitable for rugged applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of voltages, making this logic gate versatile and efficient.

Technical Specifications

Logic Gates NL27WZ07MU1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-N6

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Supply Current (ICC):

.1 mA

Propagation Delay At Nominal Supply:

4.8 ns

Propagation Delay (tpd):

12 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.65 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1 mm

Trade Compliance

NL27WZ07MU1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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