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NL17VHC1G07DTT1G

Onsemi

NL17VHC1G07DTT1G by Onsemi

NL17VHC1G07DTT1G by Onsemi is a CMOS Logic Gate with 3V nominal voltage, 14.5ns propagation delay, and 8A max I (ol). Suitable for military applications, it features open-drain output characteristics and operates in temperatures ranging from -55 to 125 °C.

Median Price

$0.148

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

$0.160

1k+ parts

$0.133

10k+ parts

$0.118

60,000

-

$0.160

$0.133

$0.118

Farnell

UK . 60,000 parts In-Stock

1+ parts

-

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$0.145

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60,000

-

-

$0.145

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Verical

USA . 60,000 parts In-Stock

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$0.148

60,000

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$0.148

Distributors (In-Stock)

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Digiode

USA . 885 parts In-Stock

1+ parts

$0.124

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885

$0.124

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Vyrian

USA . 3,791 parts In-Stock

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3,791

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Distributors (Availability)

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Corphita

USA . 1,733 parts In-Stock

1+ parts

$0.118

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1,733

$0.118

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Vigor

Singapore . 205 parts In-Stock

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$0.130

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205

$0.130

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Corohmni

South Africa . 321 parts In-Stock

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$0.131

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321

$0.131

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AZTECH Wire

Italy . 1,163 parts In-Stock

1+ parts

$21.020

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1,163

$21.020

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Kepictronics

USA . 69,000 parts In-Stock

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69,000

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Continental Prestige Electronics

USA . 60,000 parts In-Stock

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$0.114

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$0.114

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SupplyDigital Components

Austria . 7,595 parts In-Stock

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7,595

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Kulean Microsystems

USA . 6,429 parts In-Stock

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Problanco Electronics

Mexico . 4,372 parts In-Stock

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4,372

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TANS Electronics

Latvia . 2,811 parts In-Stock

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2,811

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UHIMA Technologies

Türkiye . 615 parts In-Stock

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615

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Microchip USA

USA . 470 parts In-Stock

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470

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Overview

Enhance your electronic projects with the NL17VHC1G07DTT1G by Onsemi! Crafted with precision and reliability, this logic gate from a trusted manufacturer offers unparalleled performance for a wide range of applications. With its advanced technology and military-grade quality, customers can expect seamless operation and efficiency. Experience the benefits of this versatile product, designed to meet your specific needs and deliver exceptional results. Elevate your projects with the NL17VHC1G07DTT1G and unlock a world of possibilities in the realm of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product ideal for portable or rugged applications.

Surface Mount: YES

Surface mount technology provides flexibility in circuit board design and allows for smaller form factor.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V provides a good balance between power consumption and performance.

Propagation Delay (tpd): 14.5 ns

The low propagation delay ensures fast signal processing and high-speed operation.

Output Characteristics: OPEN-DRAIN

The open-drain output allows for easy interfacing with other components in the circuit.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the product energy efficient and reliable.

Technical Specifications

Logic Gates NL17VHC1G07DTT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

14.5 ns

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.5 mm

Trade Compliance

NL17VHC1G07DTT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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