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NL17SZ14EDFT2G

Onsemi

NL17SZ14EDFT2G by Onsemi

NL17SZ14EDFT2G by Onsemi is a CMOS Logic Gate with 7.5ns Propagation Delay, 50pF Load Capacitance, and 24A Max I (ol). Ideal for military applications due to its MILITARY Temperature Grade and Schmitt Trigger technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,104 parts In-Stock

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Digiode

USA . 665 parts In-Stock

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AZTECH Wire

Italy . 633 parts In-Stock

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$15.710

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633

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Component Stockers USA

USA . 379 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 7,366 parts In-Stock

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Problanco Electronics

Mexico . 7,286 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,029 parts In-Stock

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TANS Electronics

Latvia . 5,789 parts In-Stock

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Kulean Microsystems

USA . 3,344 parts In-Stock

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Corphita

USA . 1,825 parts In-Stock

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Corohmni

South Africa . 291 parts In-Stock

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UHIMA Technologies

Türkiye . 265 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic projects with the NL17SZ14EDFT2G by Onsemi, a high-quality logic gate that offers precision and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for applications requiring fast and efficient signal processing. With its compact design and low power consumption, it provides excellent value and performance. Whether you're a hobbyist or a professional, this logic gate is sure to meet your needs and exceed your expectations. Upgrade your projects today with the NL17SZ14EDFT2G and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gate, making it suitable for various environmental conditions.

Propagation Delay at Nominal Supply: 7.5 ns

With a low propagation delay, this logic gate can quickly respond to input signals, making it ideal for high-speed applications.

Surface Mount: YES

The surface mount capability allows for easy installation and integration into printed circuit boards, saving time and space during assembly.

Nominal Supply Voltage: 2.3 V

This low supply voltage requirement helps in reducing power consumption, making the logic gate energy-efficient.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature range ensures reliability and stability of the logic gate in extreme conditions.

Technical Specifications

Logic Gates NL17SZ14EDFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

7.5 ns

Propagation Delay (tpd):

15.6 ns

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NL17SZ14EDFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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