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NL17SZ06XV5T2

Onsemi

NL17SZ06XV5T2 by Onsemi

NL17SZ06XV5T2 by Onsemi is a CMOS Logic Gate with 5 terminals, Vsup ranging from 1.65V to 5.5V, and tpd of 12ns. It operates in industrial temperatures (-40 to 85 °C) and has an open-drain output suitable for various applications requiring fast propagation delay and low power consumption.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,224 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

3,224

-

$0.066

$0.055

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,438 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

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1,438

$0.051

-

-

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Vyrian

USA . 8,760 parts In-Stock

1+ parts

-

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8,760

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,915 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

-

1,915

$0.049

-

-

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Vigor

Singapore . 762 parts In-Stock

1+ parts

$0.050

100+ parts

-

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762

$0.050

-

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Corohmni

South Africa . 75 parts In-Stock

1+ parts

$0.054

100+ parts

-

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75

$0.054

-

-

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AZTECH Wire

Italy . 1,219 parts In-Stock

1+ parts

$12.780

100+ parts

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1,219

$12.780

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SupplyDigital Components

Austria . 7,423 parts In-Stock

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7,423

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TANS Electronics

Latvia . 7,069 parts In-Stock

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7,069

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Problanco Electronics

Mexico . 5,307 parts In-Stock

1+ parts

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5,307

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A-Z Elektronik GmbH

Germany . 5,141 parts In-Stock

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5,141

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Continental Prestige Electronics

USA . 3,224 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.047

10k+ parts

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3,224

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-

$0.047

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Kulean Microsystems

USA . 537 parts In-Stock

1+ parts

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537

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UHIMA Technologies

Türkiye . 194 parts In-Stock

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194

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Microchip USA

USA . 106 parts In-Stock

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106

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Overview

Discover the NL17SZ06XV5T2 by Onsemi, a reliable logic gate that offers top-notch quality and performance. With Onsemi's reputation for excellence in manufacturing, this product is designed to meet the highest standards in the industry. Perfect for a variety of applications, this logic gate provides quick and efficient operation, making it ideal for any project requiring precise and fast signal processing. Experience the value and benefits of this advanced technology, with its compact design and low power consumption, the NL17SZ06XV5T2 is a must-have component for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are cost-effective and offer good durability, making the product suitable for long-term use.

Surface Mount: YES

Surface mount technology allows for easy installation and compact design, making it ideal for space-constrained applications.

Nominal Supply Voltage / Vsup (V): 2.5

Operates efficiently at a low voltage, leading to energy savings and reduced power consumption.

Maximum I (ol): 24 Amp

Capable of handling high current output, ensuring reliable performance under heavy load conditions.

Propagation Delay (tpd): 12 ns

Low propagation delay ensures fast response times, critical for time-sensitive applications.

Output Characteristics: OPEN-DRAIN

Open-drain output allows for easy interfacing with other components, enhancing versatility and compatibility.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making the product efficient and reliable.

Technical Specifications

Logic Gates NL17SZ06XV5T2 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

17SZ

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Length:

1.6 mm

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL6,.047,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.6 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1.2 mm

Trade Compliance

NL17SZ06XV5T2 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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