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NCV7703D2G

Onsemi

NCV7703D2G by Onsemi

NCV7703D2G by Onsemi is a Motion Control IC with 14 terminals, operating at supply voltages of 3-5.25V. It features a max output current of 1A and is designed for Brush DC Motor control applications. The small outline package measures 8.65mm in length, making it suitable for compact designs requiring precise motor control.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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AZTECH Wire

Italy . 1,184 parts In-Stock

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TANS Electronics

Latvia . 7,809 parts In-Stock

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SupplyDigital Components

Austria . 5,276 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 2,002 parts In-Stock

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UHIMA Technologies

Türkiye . 856 parts In-Stock

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Overview

Discover the NCV7703D2G by Onsemi, a top-quality motion control IC that boasts exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader, this product is perfect for a wide range of applications. With its small outline package style and dual terminal position, the NCV7703D2G offers unparalleled value to customers seeking precise control over their brush DC motors. Experience the benefits of this innovative product and take your projects to new heights with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the Motion Control ICs, ensuring reliability and longevity.

Surface Mount: YES

Easier and more efficient assembly onto circuit boards, reducing production time and costs.

Nominal Supply Voltage (Vsup): 5 V

Compatible with common voltage standards, making it easy to integrate into existing systems.

Width (mm): 3.9 mm

Compact size allows for space-saving installation in smaller devices or circuit layouts.

Maximum Output Current: 1 A

Capable of providing sufficient power to drive motors or other components, making it versatile for various applications.

Technical Specifications

Motion Control ICs NCV7703D2G attributes and parameters. Explore more Motion Control ICs devices from Onsemi

Specs

Additional Features:

ALSO REQUIRES DRIVER SUPPLY 5.5 TO 40 VOLTS

Other IC type:

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

No. of Functions:

1

No. of Terminals:

14

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5,5.5/40

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Motion Control Electronics

Maximum Supply Current (Isup):

4 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

NCV7703D2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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