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NCV7381DP0R2G

Onsemi

NCV7381DP0R2G by Onsemi

NCV7381DP0R2G by Onsemi is a Line Driver with 16 terminals, operating at -40 to 125 °C. It has a max supply voltage of 50V and differential output feature. Ideal for automotive applications due to AEC-Q100 screening level.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Flip Electronics

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Microchip USA

USA . 3,610 parts In-Stock

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$9.006

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AZTECH Wire

Italy . 989 parts In-Stock

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Component Stockers USA

USA . 518 parts In-Stock

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Perfect Parts

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SupplyDigital Components

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TANS Electronics

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Authorized Procurement Solutions

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Kulean Microsystems

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Problanco Electronics

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Overview

Discover the NCV7381DP0R2G by Onsemi, a top-of-the-line line driver designed to exceed your expectations. With a focus on quality and innovation, Onsemi delivers cutting-edge products that stand out in the market. The NCV7381DP0R2G is versatile and reliable, suitable for a wide range of applications in various industries. Experience seamless performance, unmatched reliability, and exceptional value with this product. Upgrade your projects with the NCV7381DP0R2G and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components of the product, ensuring durability and reliability.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Maximum Supply Voltage: 50 V

Supports a wide range of power supply voltages, making the product versatile and compatible with various systems.

Screening Level: AEC-Q100

Meets automotive industry standards for quality and reliability, ensuring suitability for automotive applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for use in harsh environments or applications.

Technical Specifications

Line Drivers & Receivers NCV7381DP0R2G attributes and parameters. Explore more Line Drivers & Receivers devices from Onsemi

Specs

Differential Output:

YES

Driver No. of Bits:

1

Input Characteristics:

DIFFERENTIAL SCHMITT TRIGGER

Interface IC Type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

6.2 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Receiver No. of Bits:

1

Screening Level:

AEC-Q100

Maximum Seated Height:

1.99 mm

Maximum Supply Voltage:

50 V

Minimum Supply Voltage:

5.5 V

Maximum Supply Voltage-1:

5.25 V

Minimum Supply Voltage-1:

4.75 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5.3 mm

Trade Compliance

NCV7381DP0R2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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