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NCP5338MNR2G

Onsemi

NCP5338MNR2G by Onsemi

NCP5338MNR2G by Onsemi is a MOSFET gate driver with max supply voltage of 20V, operating temp range -10 to 100 °C. It has 43 terminals, suitable for high side driver applications. Package style is very thin profile chip carrier, making it ideal for compact designs in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 39,000 parts In-Stock

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Vyrian

USA . 4,919 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 1,089 parts In-Stock

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$20.690

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Kulean Microsystems

USA . 6,888 parts In-Stock

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TANS Electronics

Latvia . 6,320 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,811 parts In-Stock

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SupplyDigital Components

Austria . 4,080 parts In-Stock

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Problanco Electronics

Mexico . 1,799 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 453 parts In-Stock

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Corohmni

South Africa . 300 parts In-Stock

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Overview

Unlock the potential of your power supply designs with the NCP5338MNR2G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality MOSFET Gate Drivers that cater to a wide range of applications. With surface mount capability and a compact square package shape, this product is perfect for high side driver requirements. Offering a maximum supply voltage of 20V and a minimum operating temperature of -10 °C, the NCP5338MNR2G provides unparalleled performance and reliability. Trust Onsemi to deliver cutting-edge solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and compact placement on PCB, saving space and simplifying assembly process.

Maximum Supply Voltage: 5.5 V

Suitable for applications where a lower supply voltage is preferred or required, providing flexibility in design.

Package Shape: SQUARE

Square package shape helps in efficient utilization of board space and allows for uniform heat dissipation.

No. of Terminals: 43

Provides ample connectivity options for various configurations and connections, enhancing versatility.

Maximum Operating Temperature: 100 °C

Capable of operating at high temperatures, ensuring reliability and stability in demanding environments.

Minimum Operating Temperature: -10 °C

Capable of functioning in cold temperatures, making it suitable for a wide range of operating conditions.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow processes during assembly, ensuring robust manufacturing capabilities.

Nominal Supply Voltage: 5 V

Common supply voltage that is widely available and compatible with many systems, simplifying integration.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Utilizes advanced technology for efficient and precise control of MOSFETs in half-bridge configurations, enabling high-performance operation.

Technical Specifications

MOSFET Gate Drivers NCP5338MNR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-XBCC-B43

JESD-609 Code:

e3

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

43

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-10 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC40,.24SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,12

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

20 V

Minimum Supply Voltage-1:

4.5 V

Nominal Supply Voltage-1:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

NCP5338MNR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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