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NCP5901MNTBG

Onsemi

NCP5901MNTBG by Onsemi

NCP5901MNTBG by Onsemi is a MOSFET gate driver with 8 terminals, operating voltage range of 4.5-13.2V, and max supply voltage of 13.2V. It features a small outline package style suitable for high side driver applications in various electronic systems requiring precise control over power supplies at temperatures ranging from -10 to 125°C.

Median Price

$0.221

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

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Mouser Electronics

USA . 496 parts In-Stock

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$0.450

100+ parts

-

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$0.208

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$0.176

496

$0.450

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$0.208

$0.176

Rochester

USA . 444,407 parts In-Stock

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-

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$0.215

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$0.179

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$0.159

444,407

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$0.215

$0.179

$0.159

DigiKey

USA . 444,407 parts In-Stock

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$0.270

444,407

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$0.270

Verical

USA . 443,870 parts In-Stock

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$0.199

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Flip Electronics (Authorized)

USA . 3,924 parts In-Stock

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Chip1Stop

Japan . 249 parts In-Stock

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$0.221

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$0.178

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249

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$0.178

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Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$0.157

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$0.157

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Digiode

USA . 2,242 parts In-Stock

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$0.167

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$0.167

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Bristol Electronics

USA . 17,229 parts In-Stock

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$0.452

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$0.167

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$0.117

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17,229

$0.452

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$0.117

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DigiKey Marketplace

USA . 151,411 parts In-Stock

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Vyrian

USA . 113,725 parts In-Stock

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Chip Stock

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Dan-Mar Components

USA . 16,734 parts In-Stock

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Electronics Depot

USA . 9,952 parts In-Stock

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Flip Electronics

USA . 3,924 parts In-Stock

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ComSIT Distribution GmbH

Germany . 521 parts In-Stock

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Microfarads

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Connector Distribution Corp

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Right Parts Inc.

USA . 184 parts In-Stock

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Prism Electronics

USA . 3 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 132 parts In-Stock

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$0.101

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132

$0.101

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Ampacity Inc.

Singapore . 113,805 parts In-Stock

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$0.150

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$0.150

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Argo Parts USA

USA . 2,443 parts In-Stock

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$0.157

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$0.153

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Continental Prestige Electronics

USA . 2,167 parts In-Stock

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$0.157

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$0.154

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Netroflash

USA . 50 parts In-Stock

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$0.157

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$0.150

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$0.146

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$0.157

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Corphita

USA . 2,444 parts In-Stock

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$0.158

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Vigor

Singapore . 184 parts In-Stock

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$0.180

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Aztec Data Supply Inc.

USA . 500 parts In-Stock

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$10.630

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Kepictronics

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Perfect Parts

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Problanco Electronics

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SupplyDigital Components

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TANS Electronics

Latvia . 2,104 parts In-Stock

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Futuretech Components

Singapore . 685 parts In-Stock

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Kulean Microsystems

USA . 476 parts In-Stock

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UHIMA Technologies

Türkiye . 249 parts In-Stock

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Overview

Enhance the performance and reliability of your electronic designs with the NCP5901MNTBG MOSFET Gate Driver by Onsemi. Known for their high-quality components, Onsemi delivers cutting-edge technology in a compact package that is ideal for a wide range of applications. With a maximum supply voltage of 13.2V and a minimum operating temperature of -10°C, this small outline driver offers unmatched efficiency and precision. Trust Onsemi to provide you with the tools you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness, making the product suitable for a wide range of applications.

Surface Mount: YES

The ability to be surface mounted simplifies the assembly process and allows for more compact designs.

Maximum Supply Voltage: 13.2 V

This high voltage rating allows the gate driver to be used in a variety of different power supply configurations.

Package Shape: SQUARE

The square shape makes it easy to mount and ensures a consistent footprint for integration into circuit designs.

Power Supplies (V): 4.5/13.2

This range of power supply voltages offers flexibility in system design and compatibility with different power sources.

No. of Terminals: 8

Having 8 terminals allows for a greater level of control and functionality in driving MOSFETs.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

This package style ensures efficient heat dissipation and a compact form factor, making it suitable for space-constrained applications.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage allows for operation in low power scenarios, increasing the versatility of the product.

Maximum Operating Temperature: 125 °C

The high operating temperature range ensures reliable performance even in demanding environmental conditions.

Minimum Operating Temperature: -10 °C

The ability to operate at low temperatures makes this product suitable for a wide range of applications, including automotive and industrial.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, ensuring long-term reliability in use.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting options and ease of connection to external components.

Maximum Seated Height: 1 mm

The low seated height makes the product suitable for applications where space is limited.

Width: 2 mm

The compact width makes the product easy to integrate into circuit designs with limited space.

High Side Driver: YES

The high side driver capability allows for efficient control of the MOSFET in high side switching applications.

Maximum Time At Peak Reflow Temperature (s): 30

This time limit ensures that the product can withstand reflow soldering processes without degradation.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability makes the product suitable for lead-free soldering processes.

Length: 2 mm

The compact length allows for easy integration into tight PCB layouts.

Terminal Form: NO LEAD

The lead-free terminal form is environmentally friendly and complies with regulations regarding hazardous materials.

Nominal Supply Voltage: 5 V

The 5V nominal supply voltage provides a common voltage level for compatibility with a wide range of systems.

Terminal Pitch: 0.5 mm

The small terminal pitch allows for high density mounting and efficient use of PCB space.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter based interface IC type offers flexibility in driving MOSFETs with different configuration requirements.

Technical Specifications

MOSFET Gate Drivers NCP5901MNTBG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-10 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.08,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.5/13.2

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

NCP5901MNTBG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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